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參數(shù)資料
| 型號： | BUX77A-JQR-B |
| 廠商： | SEMELAB LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-257AB |
| 封裝： | HERMETIC SEALED, METAL, TO220M, 3 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 810K |
| 代理商： | BUX77A-JQR-B |
SILICON PLANAR EPITAXIAL
NPN/PNP TRANSISTORS
BUX77A-220M / BUX78A-220M
Semelab Limited
Telephone +44 (0) 1455 556565
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 5339
Issue 4
Page 2 of 3
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
(1)
Symbols
Parameters
Test Conditions
Min.
Typ
Max.
Units
V(BR)CEO
(2)
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
IC = 50mA
IB = 0
80
V(BR)CES
IC = 2mA
VBE = 0
100
V(BR)EBO
IE = 1.0mA
IC = 0
6
V
ICEO
Collector Cut-Off Current
VCE = 60V
IB = 0
10
VCB = 80V
IE = 0
0.5
ICBO
Collector Cut-Off Current
TC = 150°C
150
IEBO
Emitter Cut-Off Current
VEB = 4V
IC = 0
0.5
μA
IC = 0.5A
VCE = 5V
50
IC = 2A
VCE = 5V
50
250
IC = 5A
VCE = 5V
30
IC = 1.0A
VCE = 5V
hFE
(2)
Forward-current transfer
ratio
TC = -40°C
25
VCE(sat)
(2)
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
IC = 5A
IB = 0.5A
1.0
VBE(sat)
(2)
IC = 5A
IB = 0.5A
1.3
V
DYNAMIC CHARACTERISTICS
IC = 0.5A
VCE = 5V
|hfe|
Small signal forward-current
transfer ratio
f = 20MHz
1.5
IC = 5A
VCC = 40V
ton
Turn-On Time
IB1 = 0.5A
0.3
0.4
IC = 5A
VCC = 40V
toff
Turn-Off Time
IB1 = - IB2 = 0.5A
1.1
2.5
μs
Notes
(1)
For PNP (BUX78A) device, voltage and current values are negative
(2)
Pulse Width
≤
300us,
δ
≤
2%
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