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參數資料
| 型號： | BUT11XI |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Hook-Up Wire; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Color:Yellow; Cable/Wire MIL SPEC:MIL-W-76C Type MW; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes |
| 中文描述： | 5 A, 450 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, ISOLATED TO-220, FULL PACK-3 |
| 文件頁數： | 3/7頁 |
| 文件大?。?/td> | 69K |
| 代理商： | BUT11XI |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11XI
Fig.1. Test circuit for V
CEOsust
.
Fig.2. Oscilloscope display for V
CEOsust
.
Fig3. Test circuit resistive load. V
= -6 to +8 V
V
= 250 V; t
= 20
μ
s;
δ
= t
p
/ T = 0.01.
R
B
and R
L
calculated from I
Con
and I
Bon
requirements.
Fig.4. Switching times waveforms with resistive load.
Fig.5. Test circuit inductive load.
V
CC
= 300 V; -V
BE
= 5 V; L
C
= 200 uH; L
B
= 1 uH
Fig.6. Switching times waveforms with inductive load.
+ 50v
100-200R
Horizontal
Vertical
Oscilloscope
1R
6V
30-60 Hz
300R
IC
IB
10 %
10 %
90 %
90 %
ton
toff
ts
tf
IBon
-IBoff
ICon
tr
30ns
VCE / V
min
VCEOsust
IC / mA
100
200
250
0
LB
IBon
-VBB
LC
T.U.T.
VCC
tp
T
VCC
R
R
T.U.T.
0
VIM
B
L
IC
IB
ICon
90 %
IBon
-IBoff
t
t
ts
toff
tf
10 %
August 1997
3
Rev 1.000
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