參數(shù)資料
型號: BULD26-1
英文描述: TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 4A I(C) | TO-251
中文描述: 晶體管|晶體管|叩| 300V五(巴西)總裁| 4A條一(c)|至251
文件頁數(shù): 1/6頁
文件大?。?/td> 104K
代理商: BULD26-1
BULD26
MEDIUM VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
PRELIMINARY DATA
I
SGS-THOMSON PREFERRED SALESTYPE
I
MEDIUM VOLTAGE CAPABILITY
I
LOW SPREAD OF DYNAMIC PARAMETERS
I
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
I
VERY HIGH SWITCHING SPEED
I
FULLY CHARACTERISED AT 125
o
C
I
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
APPLICATIONS
I
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
I
FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The BULD26 is manufactured using medium
voltage Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining a wide RBSOA.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
INTERNAL SCHEMATIC DIAGRAM
January 1995
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Parameter
Value
600
300
10
4
8
2
4
20
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
o
C
o
C
Collector-Emitter Voltage (V
BE
= 0V)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< 5 ms)
Total Dissipation at T
c
= 25
o
C
Storage Temperature
Max. Operating Junction Temperature
1
3
2
IPAK
(TO-251)
(Suffix ”-1”)
1/6
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