- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄369569 > BUL53BSMD (SEMELAB LTD) ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | BUL53BSMD |
| 廠商： | SEMELAB LTD |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR |
| 中文描述： | 12 A, 250 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | CERAMIC, SMD1, 3 PIN |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 20K |
| 代理商： | BUL53BSMD |
BUL53BSMD
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukPrelim. 7/00
Parameter
Test Conditions
I
C
= 100mA
f = 10MHz
V
CB
= 20V
f = 1.0MHz
Min.
Typ.
Max.
Unit
Parameter
Collector - Emitter
sustaining voltage
Collector - Base
breakdown voltage
Emitter - Base
breakdown voltage
Collector cut-off current
Collector - Base cut-off
current
Test Conditions
Min.
Typ.
Max.
Unit
I
C
= 100mA
I
C
= 1mA
I
B
= 1mA
I
C
= 0
I
B
= 0
I
E
= 0
V
CE
= 250V
V
CB
= 500V
T
C
= 125°C
V
EB
= 5V
T
C
= 125°C
I
B
= 10mA
I
B
= 200mA
I
B
= 500mA
I
B
= 200mA
I
B
= 500mA
I
C
= 0
I
C
= 100mA
I
C
= 2A
I
C
= 5A
I
C
= 2A
I
C
= 5A
I
C
= 1A
V
CE
= 4V
I
C
= 100mA
I
C
= 2A
I
C
= 5A
V
CE
= 4V
V
CE
= 4V
V
CE
= 4V
ELECTRICAL CHARACTERISTICS
(Tcase= 25°C unless otherwise stated)
Emitter cut-off current
Collector - Emitter
saturation voltage
Base - Emitter
saturation voltage
Base - Emitter
saturation voltage
DC Current gain
250
500
10
100
10
100
10
100
0.1
0.3
0.6
1.1
1.2
0.05
0.15
0.3
0.8
0.9
0.8
1.0
20
20
20
45
40
V
V
V
m
A
m
A
m
A
V
V
V
—
Transition frequency
Output capacitance
V
CE
= 4V
I
E
= 0
20
200
MHz
pF
* Pulse test t
p
= 300
m
s ,
d ￡
2%
DYNAMIC CHARACTERISTICS
(Tcase= 25°C unless otherwise stated)
V
CEO(sus)*
V
(BR)CBO*
V
(BR)EBO*
I
CEO*
I
CBO*
I
EBO*
V
CE(sat)*
V
BE(sat)*
V
BE(on)*
h
FE*
f
T
C
ob
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUL54A-TO5 | BJT |
| BUL54 | ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
| BUL54A | ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
| BUL54AFI | ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
| BUL54ASMD | ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUL54 | 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
| BUL54A | 制造商:TT Electronics / Semelab 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| BUL54AFI | 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
| BUL54ASMD | 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
| BUL54A-TO5 | 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:SILICON POWER NPN TRANSISTOR |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。