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參數(shù)資料
| 型號： | BUL52B |
| 廠商： | SEMELAB LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
| 中文描述： | 8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 31K |
| 代理商： | BUL52B |
BUL52A
LAB
SEME
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 3/95
Parameter
ELECTRICAL CHARACTERISTICS
Test Conditions
Min.
Typ.
Max.
Unit
V
CEO(sus)
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE*
V
CE(sat)*
V
BE(sat)*
f
t
C
ob
Collector – Emitter Sustaining Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector – Base Cut–Off Current
Collector – Emitter Cut–Off Current
Emitter Cut–Off Current
DC Current Gain
Collector – Emitter Saturation Voltage
Base – Emitter Saturation Voltage
Transition Frequency
Output Capacitance
500
1000
10
10
100
100
10
100
18
12
5
30
15
9
0.05
0.1
0.3
0.8
0.9
0.1
0.2
0.8
1.0
1.2
20
45
V
μ
A
μ
A
μ
A
—
V
V
MHz
pF
I
C
= 10mA
I
C
= 1mA
I
E
= 1mA
V
CB
= 1000V
T
C
= 125°C
V
CE
= 500V
I
B
= 0
V
EB
= 9V
I
C
= 0
I
C
= 0.1A
I
C
= 1A
I
C
= 2.5A
T
C
= 125°C
V
CE
= 5V
V
CE
= 5V
V
CE
= 1V
T
C
= 125°C
I
B
= 20mA
I
B
= 0.5A
I
B
= 0.5A
I
B
= 0.2A
I
B
= 0.5A
I
C
= 100mA
I
C
= 1A
I
C
= 2.5A
I
C
= 1A
I
C
= 2.5A
I
C
= 0.2A
V
CB
= 20V
V
CE
= 4V
f = 1MHz
ELECTRICAL CHARACTERISTICS
(Tcase= 25°C unless otherwise stated)
* Pulse test t
p
= 300
μ
s ,
δ
< 2%
DYNAMIC CHARACTERISTICS
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