參數(shù)資料
型號(hào): BUL138FP
英文描述: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
中文描述: 高壓快速開(kāi)關(guān)NPN電源晶體管
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 254K
代理商: BUL138FP
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
3.8
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= 800 V
V
CE
= 800 V T
j
= 125
o
C
100
500
μ
A
μ
A
μ
A
I
CEO
Collector Cut-off
Current (I
B
= 0)
V
CE
= 400 V
250
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
EBO
Emitter-Base Voltage
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 100 mA L = 25 mH
400
V
I
E
= 10 mA
9
V
I
C
= 1 A I
B
= 0.2 A
I
C
= 2 A I
B
= 0.4 A
I
C
= 3 A I
B
= 0.6 A
I
C
= 4 A I
B
= 1 A
I
C
= 5 A I
B
= 1 A
0.7
0.5
0.7
1
1
V
V
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 1 A I
B
= 0.2 A
I
C
= 2 A I
B
= 0.4 A
I
C
= 3 A I
B
= 0.6 A
1.1
1.3
1.5
V
V
V
h
FE
DC Current Gain
I
C
= 2 A V
CE
= 5 V
I
C
= 10 mA V
CE
= 5 V
8
10
40
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
I
C
= 2 A I
B1
= 0.4 A
V
BE(off)
= -5 V R
BB
= 0
V
CL
= 250 V L = 200
μ
H
I
C
= 2 A I
B1
= 0.4 A
V
BE(off)
= -5V R
BB
= 0
V
CL
= 250 V L = 200
μ
H
T
j
= 125
o
C
0.7
50
1.4
100
μ
s
ns
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
1
75
μ
s
ns
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
Safe Operating Areas
Derating Curve
BUL138FP
2/6
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