參數(shù)資料
型號(hào)： BUK9640
廠商： NXP Semiconductors N.V.
英文描述： TrenchMOS transistor Logic level FET
中文描述： TrenchMOS晶體管邏輯電平場效應(yīng)管
文件頁數(shù)： 2/9頁
文件大小： 74K
代理商： BUK9640
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
BUK9540-100A
BUK9640-100A
STATIC CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL
PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA;
MIN.
100
89
1
0.5
-
-
-
-
-
-
-
-
TYP.
-
-
1.5
-
-
0.05
-
2
30
-
29
31
MAX.
-
-
2.0
-
2.3
10
500
100
40
100
39
43
UNIT
V
V
V
V
V
μ
A
μ
A
nA
m
m
m
m
T
j
= -55C
V
DS
= V
GS
; I
D
= 1 mA
T
j
= 175C
T
j
= -55C
I
DSS
Zero gate voltage drain current
V
DS
= 100 V; V
GS
= 0 V;
T
j
= 175C
I
GSS
R
DS(ON)
Gate source leakage current
Drain-source on-state
resistance
V
GS
=
±
10 V; V
= 0 V
V
GS
= 5 V; I
D
= 25 A
T
j
= 175C
V
GS
= 10 V; I
D
= 25 A
V
GS
= 4.5 V; I
D
= 25 A
DYNAMIC CHARACTERISTICS
T
mb
= 25C unless otherwise specified
SYMBOL
PARAMETER
C
iss
Input capacitance
C
oss
Output capacitance
C
rss
Feedback capacitance
t
d on
Turn-on delay time
t
r
Turn-on rise time
t
d off
Turn-off delay time
t
f
Turn-off fall time
L
d
Internal drain inductance
CONDITIONS
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
MIN.
-
-
-
-
-
-
-
-
TYP.
2304
222
151
20
135
125
90
4.5
MAX.
3072
266
207
30
189
189
135
-
UNIT
pF
pF
pF
ns
ns
ns
ns
nH
V
DD
= 30 V; R
=1.2
;
V
GS
= 5 V; R
G
= 10
Measured from drain lead 6 mm
from package to centre of die
Measured from contact screw on
tab to centre of die(TO220AB)
Measured from upper edge of drain
tab to centre of die(SOT404)
Measured from source lead to
source bond pad
L
d
Internal drain inductance
-
3.5
-
nH
L
d
Internal drain inductance
-
2.5
-
nH
L
s
Internal source inductance
-
7.5
-
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL
PARAMETER
I
DR
Continuous reverse drain
current
I
DRM
Pulsed reverse drain current
V
SD
Diode forward voltage
CONDITIONS
MIN.
-
TYP.
-
MAX.
37
UNIT
A
-
-
-
-
-
-
149
1.2
-
-
-
A
V
V
ns
μ
C
I
F
= 25 A; V
GS
= 0 V
I
F
= 37 A; V
GS
= 0 V
I
F
= 37 A; -dI
/dt = 100 A/
μ
s;
V
GS
= -10 V; V
R
= 30 V
0.85
1.1
60
0.24
t
rr
Q
rr
Reverse recovery time
Reverse recovery charge
December 1999
2
Rev 1.000
相關(guān)PDF資料
PDF描述
BUK9575-55 TrenchMOS（TM）transistor Logic level FET(TrenchMOS（TM）晶體管邏輯電平FET)
BUK95R2-40B TrenchMOS logic level FET
BUK9606-55 TrenchMOS（TM）transistor Logic level FET(TrenchMOS（TM）晶體管邏輯電平FET)
BUK9608-56 TrenchMOS（TM）transistor Logic level FET(TrenchMOS（TM）晶體管邏輯電平FET)
BUK9618-56 TrenchMOS（TM）transistor Logic level FET(TrenchMOS（TM）晶體管邏輯電平FET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK9640-100A 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 100V 39A 3-Pin(2+Tab) D2PAK Cut Tape
BUK9640-100A /T3 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK9640-100A,118 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK9640-100A/C1,118 制造商:NXP Semiconductors 功能描述:PHABUK9640-100A/C1,118 PRODUCT INFORMATI
BUK9640-100A/T3 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 100V 39A 3-Pin(2+Tab) D2PAK T/R
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*