參數(shù)資料
型號： BUK9528-55A
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： TrenchMOS logic level FET
中文描述： 42 A, 55 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, SC-46, 3 PIN
文件頁數(shù)： 5/15頁
文件大?。?/td> 317K
代理商： BUK9528-55A
Philips Semiconductors
BUK9528-55A; BUK9628-55A
TrenchMOS logic level FET
Product specification
Rev. 01 — 18 January 2001
5 of 15
9397 750 07683
Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
T
j
= 25
°
C unless otherwise specified
Symbol
Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 0.25 mA; V
GS
= 0 V
T
j
= 25
°
C
T
j
=
55
°
C
55
50
V
V
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
°
C
T
j
= 175
°
C
T
j
=
55
°
C
V
DS
= 55 V; V
GS
= 0 V
T
j
= 25
°
C
T
j
= 175
°
C
V
GS
=
±
10 V; V
DS
= 0 V
V
GS
= 5 V; I
D
= 15 A;
Figure 7
and
8
T
j
= 25
°
C
T
j
= 175
°
C
V
GS
= 4.5 V; I
D
= 15 A
V
GS
= 10 V; I
D
= 15 A
1
0.5
1.5
2
2.3
V
V
V
I
DSS
drain-source leakage current
0.05
2
10
500
100
μ
A
μ
A
nA
I
GSS
R
DSon
gate-source leakage current
drain-source on-state
resistance
24
22
28
56
30
25
m
m
m
m
Dynamic characteristics
C
iss
input capacitance
C
oss
output capacitance
C
rss
reverse transfer capacitance
t
d(on)
turn-on delay time
t
r
rise time
t
d(off)
turn-off delay time
t
f
fall time
L
d
internal drain inductance
V
GS
= 0 V; V
DS
= 25 V;
f = 1 MHz;
Figure 12
1200
210
140
14
125
64
68
4.5
1725
252
195
pF
pF
pF
ns
ns
ns
ns
nH
V
DD
= 30 V; R
L
= 1.2
;
V
GS
= 5 V; R
G
= 10
from drain lead 6 mm from
package to centre of die
from contact screw on
mounting base to centre of
die SOT78
from upper edge of drain
mounting base to centre of
die SOT404
from source lead to source
bond pad
3.5
nH
2.5
nH
L
s
internal source inductance
7.5
nH
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