參數(shù)資料
型號： BUK9515
廠商： NXP Semiconductors N.V.
英文描述： TrenchMOS transistor Logic level FET
中文描述： TrenchMOS晶體管邏輯電平場效應管
文件頁數(shù)： 2/8頁
文件大小： 63K
代理商： BUK9515
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
BUK9515-100A
STATIC CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL
PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA;
MIN.
100
89
1
0.5
-
-
-
-
-
-
-
-
TYP.
-
-
1.5
-
-
0.05
-
2
12.0
-
11.5
-
MAX.
-
-
2.0
-
2.3
10
500
100
15.0
40.5
14.4
16.0
UNIT
V
V
V
V
V
μ
A
μ
A
nA
m
m
m
m
T
j
= -55C
V
DS
= V
GS
; I
D
= 1 mA
T
j
= 175C
T
j
= -55C
I
DSS
Zero gate voltage drain current
V
DS
= 100 V; V
GS
= 0 V;
T
j
= 175C
I
GSS
R
DS(ON)
Gate source leakage current
Drain-source on-state
resistance
V
GS
=
±
10 V; V
= 0 V
V
GS
= 5 V; I
D
= 25 A
T
j
= 175C
V
GS
= 10 V; I
D
= 25 A
V
GS
= 4.5 V; I
D
= 25 A
DYNAMIC CHARACTERISTICS
T
mb
= 25C unless otherwise specified
SYMBOL
PARAMETER
C
iss
Input capacitance
C
oss
Output capacitance
C
rss
Feedback capacitance
t
d on
Turn-on delay time
t
r
Turn-on rise time
t
d off
Turn-off delay time
t
f
Turn-off fall time
L
d
Internal drain inductance
CONDITIONS
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
MIN.
-
-
-
-
-
-
-
-
TYP.
6500
550
325
45
130
400
130
3.5
MAX.
8600
660
400
65
195
560
190
-
UNIT
pF
pF
pF
ns
ns
ns
ns
nH
V
DD
= 30 V; R
=1.2
;
V
GS
= 5 V; R
G
= 10
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
L
d
Internal drain inductance
-
4.5
-
nH
L
s
Internal source inductance
-
7.5
-
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL
PARAMETER
I
DR
Continuous reverse drain
current
I
DRM
Pulsed reverse drain current
V
SD
Diode forward voltage
CONDITIONS
MIN.
-
TYP.
-
MAX.
75
UNIT
A
-
-
-
-
-
-
240
1.2
-
-
-
A
V
V
ns
μ
C
I
F
= 25 A; V
GS
= 0 V
I
F
= 75 A; V
GS
= 0 V
I
F
= 75 A; -dI
/dt = 100 A/
μ
s;
V
GS
= -10 V; V
R
= 30 V
0.85
1.1
80
0.35
t
rr
Q
rr
Reverse recovery time
Reverse recovery charge
December 1998
2
Rev 1.100
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