參數(shù)資料
型號： BUK854-800A
廠商： NXP SEMICONDUCTORS
元件分類： IGBT 晶體管
英文描述： Insulated Gate Bipolar Transistor IGBT
中文描述： 12 A, 800 V, N-CHANNEL IGBT, TO-220AB
封裝： PLASTIC PACKAGE-3
文件頁數(shù)： 2/7頁
文件大?。?/td> 60K
代理商： BUK854-800A
Philips Semiconductors
Product Specification
Insulated Gate Bipolar Transistor (IGBT)
BUK854-800A
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
(BR)CES
Collector-emitter breakdown
voltage
V
GE(TO)
Gate threshold voltage
I
CES
Zero gate voltage collector
current
I
CES
Zero gate voltage collector
current
I
ECS
Reverse collector current
I
GES
Gate emitter leakage current
V
CEsat
Collector-emitter saturation
voltage
CONDITIONS
V
GE
= 0 V; I
C
= 0.25 mA
MIN.
800
TYP.
-
MAX.
-
UNIT
V
V
CE
= V
GE
; I
C
= 1 mA
V
CE
= 800 V; V
GE
= 0 V; T
j
= 25 C
3
-
4
10
5.5
100
V
μ
A
V
CE
= 800 V; V
GE
= 0 V; T
j
=125 C
-
0.1
1
mA
V
CE
= -5 V; V
GE
= 0 V
V
GE
=
±
30 V; V
CE
= 0 V
V
GE
= 15 V; I
C
= 6 A
V
GE
= 15 V; I
C
= 12 A
-
-
-
-
0.1
10
2.4
3.1
5
mA
nA
V
V
100
3.5
-
DYNAMIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
g
fe
Forward transconductance
C
ies
Input capacitance
C
oes
Output capacitance
C
res
Feedback capacitance
t
d on
Turn-on delay time
t
r
Turn-on rise time
E
on
Turn-on Energy Loss
t
d off
Turn-off delay time
t
f
Turn-off fall time
E
off
Turn-off Energy Loss
t
d on
Turn-on delay time
t
r
Turn-on rise time
E
on
Turn-on Energy Loss
t
d off
Turn-off delay time
t
f
Turn-off fall time
E
off
Turn-off Energy Loss
CONDITIONS
V
CE
= 15 V; I
C
= 3 A
V
GE
= 0 V; V
CE
= 25 V; f = 1 MHz
MIN.
1.5
TYP.
4
MAX.
-
UNIT
S
-
-
-
400
45
15
750
80
40
pF
pF
pF
I
C
= 6 A; V
CC
= 500 V;
V
GE
= 15 V; R
G
= 25
;
T
j
= 25C;
Inductive Load
Energy Losses include all ’tail’
losses
-
-
-
20
30
0.25
-
-
-
ns
ns
mJ
-
-
-
170
200
0.25
270
400
0.5
ns
ns
mJ
I
C
= 6 A; V
CC
= 500 V;
V
GE
= 15 V; R
G
= 25
;
T
j
= 125C;
Inductive Load
Energy Losses include all ’tail’
losses
-
-
-
20
30
0.25
-
-
-
ns
ns
mJ
-
-
-
200
400
0.5
350
800
1
ns
ns
mJ
October 1994
2
Rev.1.100
相關(guān)PDF資料
PDF描述
BUK856-800 Insulated Gate Bipolar Transistor IGBT
BUK856-800A Insulated Gate Bipolar Transistor IGBT
BUT11XI Hook-Up Wire; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Color:Yellow; Cable/Wire MIL SPEC:MIL-W-76C Type MW; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes
BY359-1500 SCREWDRIVER, SENSO PH NO.1 X 80SCREWDRIVER, SENSO PH NO.1 X 80; Tip type:Phillips; Length, blade:80mm; Driver type:Phillips No 1; Handle type:COLOUR CODED; Tip Size:No.1
BY359-1500S SCREWDRIVER, SENSO POZI NO.0 X 60SCREWDRIVER, SENSO POZI NO.0 X 60; Tip type:Pozidriv; Length, blade:60mm; Driver type:Pozidriv No 0; Handle type:COLOUR CODED; Tip Size:No.0
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK856-400IZ 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Insulated Gate Bipolar Transistor Protected Logic-Level IGBT
BUK856-800 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Insulated Gate Bipolar Transistor IGBT
BUK856-800A 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Insulated Gate Bipolar Transistor IGBT
BUK866-400IZ 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Insulated Gate Bipolar Transistor Protected Logic-Level IGBT
BUK866-400IZT/R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 20A I(C) | SOT-404
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*