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參數(shù)資料
| 型號： | BUK7621-30 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | TrenchMOS transistor Standard level FET |
| 中文描述： | 50 A, 30 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 55K |
| 代理商： | BUK7621-30 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Standard level FET
BUK7621-30
Fig.5. Typical output characteristics, T
j
= 25 C
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 C
R
DS(ON)
= f(I
D
); parameter V
GS
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
); parameter T
j
Fig.8. Typical transconductance, T
j
= 25 C
g
fs
= f(I
D
)
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 25 A; V
GS
= 5 V
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
0
5
10
15
20
25
30
0
10
20
30
40
50
VGS = 4 V
4.5 V
5 V
5.5 V
6 V
6.5 V
PHP50N03T
VDS, Drain-Source voltage (Volts)
ID, Drain current (Amps)
10 V
20 V
Tj = 25 C
0
10
20
30
40
50
0
5
10
15
20
25
PHP50N03T
Drain current, ID (A)
Transconductance, gfs (S)
VDS = 30 V
175 C
Tj = 25 C
0
10
20
30
40
50
0
0.01
0.02
0.03
0.04
0.05
0.06
PHP50N03T
5.5 V
ID, Drain current (Amps)
RDS(on), Drain-Source on resistance (Ohms)
4.5 V
VGS = 4 V
5 V
10 V
Tj = 25 C
20 V
-100
-50
0
50
100
150
200
0.5
1
1.5
2
2.5
BUK959-60
Tmb / degC
Rds(on) normlised to 25degC
0
2
4
6
8
10
0
10
20
30
40
50
PHP50N03T
Gate-source voltage, VGS (V)
Drain current, ID (A)
VDS = 30 V
175 C
Tj = 25 C
BUK759-60
0
-50
0
50
100
150
200
1
2
3
4
5
Tj / C
VGS(TO) / V
max.
typ.
min.
July 1997
4
Rev 1.000
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