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參數(shù)資料
| 型號： | BUK76150-55A |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 11A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 55V的五（巴西）直| 11A條（?。﹟對263AB |
| 文件頁數(shù)： | 6/15頁 |
| 文件大?。?/td> | 302K |
| 代理商： | BUK76150-55A |
Philips Semiconductors
BUK75150-55A; BUK76150-55A
TrenchMOS standard level FET
Product specification
Rev. 01 — 10 November 2000
6 of 15
9397 750 07647
Philips Electronics N.V. 2000. All rights reserved.
Source-drain diode
V
SD
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
I
S
= 25 A; V
GS
= 0 V;
Figure 15
I
S
= 10 A;dI
S
/dt =
100 A/
μ
s
V
GS
=
10 V; V
DS
= 30 V
0.85
1.2
V
t
rr
Q
r
32
50
ns
nC
Table 5:
T
j
= 25
°
C unless otherwise specified
Symbol
Parameter
Characteristics
…continued
Conditions
Min
Typ
Max
Unit
T
j
= 25
°
C; t
p
= 300
μ
s
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C; I
D
= 5 A
Fig 6.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03nb91
0
5
10
15
20
25
30
0
2
4
6
8
10
VDS (V)
ID
4.5
5.5
6.5
7.5
8.5
20
16
12
9.5
11
VGS (V) =
14
03nb90
80
100
120
140
160
180
5
10
15
20
VGS (V)
R200
(m
)
03nb92
100
150
200
250
300
0
5
10
15
20
ID (A)
R350
(m
)
VGS (V) =
5.5
6
6.5
7
8
10
03aa28
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
a
-60
-20
20
60
100
140
Tj (oC)
180
a
R
DSon 25 C
)
---------------------------
=
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| BUK76150-55A,118 | 功能描述:MOSFET N-CH 55V 11A D2PAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:TrenchMOS™ 標(biāo)準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| BUK7615-100A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET |
| BUK7615-100A /T3 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK7615-100A,118 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK7616-55A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS standard level FET |
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