參數(shù)資料
型號: BUK752R7-30B
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | TO-220AB
中文描述: 晶體管| MOSFET的| N溝道| 30V的五(巴西)直| 75A條(?。﹟ TO - 220AB現(xiàn)有
文件頁數(shù): 12/15頁
文件大?。?/td> 336K
代理商: BUK752R7-30B
Philips Semiconductors
BUK75/76/7E04-40A
TrenchMOS standard level FET
Product data
Rev. 02 — 7 November 2001
12 of 15
9397 750 09059
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
10. Soldering
Dimensions in mm.
Fig 19. Reflow soldering footprint for SOT404.
handbook, full pagewidth
MSD057
solder lands
solder resist
occupied area
solder paste
10.50
7.40
7.50
1.50
1.70
10.60
1.20
1.30
1.55
5.08
10.85
0.30
2.15
8.35
2.25
4.60
0.20
3.00
4.85
7.95
8.15
8.075
8.275
5.40
1.50
相關PDF資料
PDF描述
BUK753R1-40B TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 75A I(D) | TO-220AB
BUK7556-30 N-Channel Enhancement MOSFET
BUK7604-40A TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 75A I(D) | TO-263AB
BUK7609-75A TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 75A I(D) | TO-263AB
BUK7623-75A TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 53A I(D) | TO-263AB
相關代理商/技術參數(shù)
參數(shù)描述
BUK752R7-30B,127 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK752R7-60E 制造商:NXP Semiconductors 功能描述:MOSFET N-CH 60V 120A TO220
BUK752R7-60E,127 制造商:NXP Semiconductors 功能描述:BUK752R7-60E/SIL3P/RAILH// - Rail/Tube 制造商:NXP Semiconductors 功能描述:MOSFET N-CH 60V 120A TO220AB
BUK7535-100A 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK7535-100A,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube