參數(shù)資料
型號(hào)： BUK7213-40A
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： 36-PIN FEM CONN PCB RA 1284-C MINI-CEN
中文描述： 55 A, 40 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝： PLASTIC, SC-63, DPAK-3
文件頁數(shù)： 2/14頁
文件大?。?/td> 113K
代理商： BUK7213-40A
Philips Semiconductors
BUK7213-40A
TrenchMOS standard level FET
Product data
Rev. 01 — 29 January 2004
2 of 14
9397 750 12486
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
3.
Ordering information
4.
Limiting values
[1]
[2]
Current is limited by power dissipation chip rating
Continuous current is limited by package
Table 2:
Type number
Ordering information
Package
Name
D-PAK
Description
Plastic single-ended surface mounted package (Philips version of D-PAK);
3 leads (one lead cropped)
Version
SOT428
BUK7213-40A
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage (DC)
I
D
drain current (DC)
Limiting values
Conditions
Min
-
-
-
Max
40
40
±
20
78
55
55
312
Unit
V
V
V
A
A
A
A
R
GS
= 20 k
T
mb
= 25
°
C; V
GS
= 10 V;
Figure 2
and
3
[1]
-
[2]
-
T
mb
= 100
°
C; V
GS
= 10 V;
Figure 2
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
mb
= 25
°
C;
Figure 1
[1]
-
I
DM
peak drain current
-
P
tot
T
stg
T
j
Source-drain diode
I
DR
reverse drain current (DC)
total power dissipation
storage temperature
junction temperature
-
55
55
150
+175
+175
W
°
C
°
C
T
mb
= 25
°
C
[1]
-
78
55
312
A
A
A
[2]
-
I
DRM
Avalanche ruggedness
E
DS(AL)S
non-repetitive avalanche energy
peak reverse drain current
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s
-
unclamped inductive load; I
D
= 75 A;
V
DS
≤
40 V; V
GS
= 10 V; R
GS
= 50
;
starting T
mb
= 25
°
C
-
244
mJ
Electrostatic discharge
V
esd
electrostatic discharge voltage, all
pins
human body model; C = 100 pF;
R = 1.5 k
-
1.6
kV
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