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參數(shù)資料
| 型號： | BUK581-100A |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor Logic level FET |
| 中文描述： | 0.9 A, 100 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SOT-223, 4 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 59K |
| 代理商： | BUK581-100A |
Philips Semiconductors
Product Specification
PowerMOS transistor
Logic level FET
BUK581-100A
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
I
DSS
Zero gate voltage drain current
I
DSS
Zero gate voltage drain current
I
GSS
Gate source leakage current
R
DS(ON)
Drain-source on-state
resistance
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA
MIN.
100
TYP.
-
MAX.
-
UNIT
V
V
DS
= V
; I
= 0.1 mA
V
DS
= 100 V; V
GS
= 0 V;
V
DS
= 100 V; V
GS
= 0 V; T
j
= 125 C
V
GS
=
±
15 V; V
= 0 V
V
GS
= 5 V; I
D
= 0.9 A
1.0
-
-
-
-
1.5
1
0.1
10
0.51
2.0
10
1.0
100
0.90
V
μ
A
mA
nA
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL
PARAMETER
g
fs
Forward transconductance
C
iss
Input capacitance
C
oss
Output capacitance
C
rss
Feedback capacitance
t
d on
Turn-on delay time
t
r
Turn-on rise time
t
d off
Turn-off delay time
t
f
Turn-off fall time
CONDITIONS
V
DS
= 25 V; I
D
= 0.9 A
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
MIN.
1
-
-
-
-
-
-
-
TYP.
1.8
180
45
16
6
45
15
20
MAX.
-
300
60
25
10
55
25
30
UNIT
S
pF
pF
pF
ns
ns
ns
ns
V
DD
= 30 V; I
D
= 3 A;
V
GS
= 5 V; R
GS
= 50
;
R
gen
= 50
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
DR
Continuous reverse drain
current
I
DRM
Pulsed reverse drain current
V
SD
Diode forward voltage
t
rr
Reverse recovery time
Q
rr
Reverse recovery charge
CONDITIONS
-
MIN.
-
TYP.
MAX.
0.9
UNIT
A
-
I
F
= 0.9 A; V
GS
= 0 V
I
F
= 0.9 A; -dI
F
/dt = 100 A/
μ
s;
V
GS
= -10 V; V
R
= 30 V
-
-
-
-
-
3.6
1.1
-
-
A
V
ns
nC
0.85
40
100
AVALANCHE LIMITING VALUE
SYMBOL
W
DSS
PARAMETER
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
I
D
= 0.9 A; V
DD
≤
25 V;
V
GS
= 5 V; R
GS
= 50
; T
amb
= 25 C
MIN.
-
TYP.
-
MAX.
10
UNIT
mJ
January 1998
2
Rev 1.000
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK581-100AT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 900MA I(D) | SOT-223 |
| BUK58160A | 制造商:PHILIPS 功能描述:New |
| BUK581-60A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET |
| BUK581-60AT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 1.5A I(D) | SOT-223 |
| BUK582-100A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET |
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