參數(shù)資料
型號(hào): BUK456-800A
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistor
中文描述: 4 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù): 6/7頁(yè)
文件大小: 62K
代理商: BUK456-800A
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK456-800A/B
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.15. TO220AB; pin 2 connected to mounting base.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for TO220 envelopes.
3. Epoxy meets UL94 V0 at 1/8".
10,3
max
3,7
2,8
3,0
3,0 max
not tinned
1,3
max
(2x)
1 2 3
2,4
0,6
4,5
max
5,9
min
15,8
max
1,3
2,54 2,54
0,9 max (3x)
13,5
min
May 1995
6
Rev 1.200
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