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參數(shù)資料
| 型號： | BUK445-200B |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor |
| 中文描述： | 7 A, 200 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 封裝： | PLASTIC, FULL PACK-3 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 72K |
| 代理商： | BUK445-200B |
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK445-200A/B
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
I
DSS
Zero gate voltage drain current
I
DSS
Zero gate voltage drain current
I
GSS
Gate source leakage current
R
DS(ON)
Drain-source on-state
resistance
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA
MIN.
200
TYP.
-
MAX.
-
UNIT
V
V
DS
= V
; I
= 1 mA
V
DS
= 200 V; V
GS
= 0 V; T
j
= 25 C
V
DS
= 200 V; V
GS
= 0 V; T
j
=125 C
V
GS
=
±
30 V; V
DS
= 0 V
V
GS
= 10 V;
I
D
2.1
-
-
-
-
-
3.0
1
0.1
10
0.2
0.22
4.0
10
1.0
100
0.23
0.28
V
μ
A
mA
nA
BUK445-200A
BUK445-200B
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
g
fs
Forward transconductance
C
iss
Input capacitance
C
oss
Output capacitance
C
rss
Feedback capacitance
t
d on
Turn-on delay time
t
r
Turn-on rise time
t
d off
Turn-off delay time
t
f
Turn-off fall time
L
d
Internal drain inductance
CONDITIONS
V
DS
= 25 V; I
D
= 7 A
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
MIN.
6
-
-
-
-
-
-
-
-
TYP.
8.4
1400
190
55
18
35
85
35
4.5
MAX.
-
1750
250
80
30
60
120
50
-
UNIT
S
pF
pF
pF
ns
ns
ns
ns
nH
V
DD
= 30 V; I
D
= 3 A;
V
GS
= 10 V; R
GS
= 50
;
R
gen
= 50
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
L
s
Internal source inductance
-
7.5
-
nH
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
Repetitive peak voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
R.H.
≤
65% ; clean and dustfree
MIN.
-
TYP.
MAX.
1500
UNIT
V
-
12
-
pF
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
DR
Continuous reverse drain
current
I
DRM
Pulsed reverse drain current
V
SD
Diode forward voltage
t
rr
Reverse recovery time
Q
rr
Reverse recovery charge
CONDITIONS
-
MIN.
-
TYP.
-
MAX.
7.6
UNIT
A
-
I
F
= 7.6 A ; V
GS
= 0 V
I
F
= 7.6 A; -dI
/dt = 100 A/
μ
s;
V
GS
= 0 V; V
R
= 30 V
-
-
-
-
-
30
1.5
-
-
A
V
ns
μ
C
1.0
150
1.3
April 1993
2
Rev 1.100
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