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參數(shù)資料
| 型號： | BUK444-60H |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 330uF; Voltage: 200V; Case Size: 18x35.5 mm; Packaging: Bulk |
| 中文描述： | 21 A, 60 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 6/7頁 |
| 文件大?。?/td> | 66K |
| 代理商： | BUK444-60H |
Philips Semiconductors
Product specification
PowerMOS transistor
BUK444-60H
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.17. SOT186; The seating plane is electrically isolated from all terminals.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for F-pack envelopes.
3. Epoxy meets UL94 V0 at 1/8".
10.2
max
5.7
max
3.2
3.0
0.9
0.5
4.4
max
2.9 max
4.4
4.0
seating
plane
7.9
7.5
17
max
0.55 max
1.3
13.5
min
2.54
5.08
0.9
0.7
1
2
3
M
0.4
top view
3.5 max
not tinned
4.4
March 1996
6
Rev 1.000
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