參數(shù)資料
型號: BUK438-800B
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistor
中文描述: 6.6 A, 800 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 3/7頁
文件大小: 65K
代理商: BUK438-800B
Philips Semiconductors
Product specification
PowerMOS transistor
BUK438W-800A/B
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
mb
); conditions: V
GS
10 V
Fig.3. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics, T
j
= 25 C
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 C
R
DS(ON)
= f(I
D
); parameter V
GS
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1E-07
1E-05
1E-03
t / s
1E-01
1E+01
Zth j-mb / (K/W)
1
0.1
0.01
0.001
0
0.5
0.2
0.1
0.05
0.02
BUKx38-hv
D =
t
p
t
p
T
T
P
D
t
D =
0
20
40
60
80
100
120
140
Tmb / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0
VDS / V
ID / A
BUK4y8-800A
20
15
10
5
0
4
5
6
4.5
5.5
10
10
20
30
VGS / V =
10
1000
VDS / V
ID / A
100
10
1
0.1
BUK438-800
100
tp = 10 us
100 us
1 ms
10 ms
100 ms
DC
B
A
RDS(ON)=VDSID
0
10
20
ID / A
RDS(ON) / Ohm
4
BUK4y8-800A
5
4
3
2
1
0
5
6
10
5.5
5
15
4.5
VGS / V =
February 1998
3
Rev 1.000
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BUK444-800A PowerMOS transistor
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BUK454-800B PowerMOS transistor
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