參數(shù)資料
型號： BUK221-50DY
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： Dual channel high-side TOPFET
中文描述： 4 A, 45 V, 0.09 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, D2PAK-7
文件頁數(shù)： 5/16頁
文件大?。?/td> 435K
代理商： BUK221-50DY
Philips Semiconductors
BUK221-50DY
Dual channel high-side TOPFET
Product data
Rev. 01 — 16 April 2003
5 of 16
9397 750 11167
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
5.
Limiting values
[1]
The device will not be harmed by exposure to the maximum supply voltage, but normal operation is not possible because of overvoltage
shutdown - see
Table 6 “Static characteristics”
for the operating range.
Reverse battery voltage is only allowed with external resistors to limit the input and status currents to a safe value. The connected load
must limit the reverse load current. The internal ground resistor limits the reverse battery ground current. See
Figure 10 “Typical
dynamic response circuit diagram including reverse supply protection and open load detection.”
[2]
6.
Thermal characteristics
Table 4:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
V
BG
battery-ground supply voltage
I
L
load current
P
tot
total power dissipation
T
stg
storage temperature
T
j
junction temperature
T
mb
mounting base temperature
Reverse battery voltage
V
BGR
reverse battery-ground supply voltage
V
BGRR
repetitive reverse battery-ground
supply voltage
Input current
I
I
input current
I
IRM
repetitive peak input current
Status current
I
S
status current
I
SRM
repetitive peak status current
Inductive load clamping
E
BL(CL)S
non-repetitive battery-load clamping
energy
Electrostatic discharge voltage
V
esd
electrostatic discharge voltage
Limiting values
Conditions
Min
-
-
-
55
40
-
Max
45
4
44.6
+175
+150
260
Unit
V
A
W
°
C
°
C
°
C
[1]
T
mb
≤
130
°
C
T
mb
≤
25
°
C
during soldering (
≤
10 s)
R
I
≥
3.3 k
; R
SS
≥
3.3 k
;
Figure 10
[2]
-
-
16
32
V
V
5
50
+5
+50
mA
mA
δ ≤
0.1; t
p
= 300
μ
s
5
50
+5
+50
mA
mA
δ ≤
0.1; t
p
= 300
μ
s
T
j
= 150
°
C prior to turn-off; V
BG
= 13 V;
I
L
= 5 A; (one channel)
Figure 13
-
60
mJ
Human Body Model 1; C = 100 pF;
R = 1.5 k
-
2
kV
Table 5:
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
Conditions
per channel
both channels
mounted on printed circuit board;
minimum footprint
Min
-
-
-
Typ
4
2
50
Max
5.6
2.8
-
Unit
K/W
K/W
K/W
R
th(j-a)
thermal resistance from junction to
ambient
相關PDF資料
PDF描述
BUK436W-1000B PowerMOS transistor
BUK436W-200A PowerMOS transistor
BUK436W-200B RECTIFIER SCHOTTKY SINGLE 2A 60V 50A-Ifsm 0.7Vf 0.5A-IR SMA 5K/REEL
BUK436W-800A RECTIFIER SCHOTTKY SINGLE 2A 80V 50A-Ifsm 0.79Vf 0.5A-IR SMB 3K/REEL
BUK436W-800B DIODE, SCHOTTKY, SM, 100V.3A, B310
相關代理商/技術參數(shù)
參數(shù)描述
BUK221-50DY,118 功能描述:MOSFET N-CH 50V 4A SOT427 RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 內(nèi)部開關 系列:TOPFET™ 標準包裝:1,000 系列:- 類型:高端/低端驅(qū)動器 輸入類型:SPI 輸出數(shù):8 導通狀態(tài)電阻:850 毫歐，1.6 歐姆 電流 - 輸出 / 通道:205mA，410mA 電流 - 峰值輸出:500mA，1A 電源電壓:9 V ~ 16 V 工作溫度:-40°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 供應商設備封裝:PG-DSO-20-45 包裝:帶卷 (TR)
BUK223-50Y 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor TOPFET high side switch
BUK223-50Y,127 功能描述:MOSFET RAIL TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK224-50Y 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TOPFET high side switch
BUK224-50Y /T3 功能描述:電源開關 IC - 配電 TAPE13 TOPFET2 RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時間（最大值）:400 us 關閉時間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23-5
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*