參數(shù)資料
型號(hào)： BUK220-50Y
廠商： NXP SEMICONDUCTORS
元件分類： 外設(shè)及接口
英文描述： RECEPTACLE, MDR, R/A, 36WAY; Connector type:Micro D Ribbon; Gender:Receptacle; Ways, No. of:36; Termination method:Solder; Material, contact:Copper Alloy; Plating, contact:Gold; Mounting type:PC Board; Colour:Beige; Current RoHS Compliant: Yes
中文描述： 2 A BUF OR INV BASED PRPHL DRVR, PSSO4
封裝： PLASTIC, SOT-426, D2PAK-5
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 54K
代理商： BUK220-50Y
Philips Semiconductors
Product Specification
TOPFET high side switch
SMD version of BUK219-50Y
BUK220-50Y
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
BG
Continuous supply voltage
0
50
V
I
L
P
D
T
stg
T
j
Continuous load current
Total power dissipation
Storage temperature
Continuous junction temperature
1
T
mb
≤
114C
T
mb
≤
25C
-
-
6
A
W
C
C
41
175
150
-55
-
T
sold
Mounting base temperature
during soldering
-
260
C
Reverse battery voltages
2
Continuous reverse voltage
Peak reverse voltage
-V
BG
-V
BG
-
-
16
32
V
V
Application information
External resistors
3
R
I
, R
S
to limit input, status currents
3.2
-
k
Input and status
I
I
, I
S
Continuous currents
-5
5
mA
I
I
, I
S
Repetitive peak currents
δ
≤
0.1, tp = 300
μ
s
-50
50
mA
Inductive load clamping
I
L
= 1 A, V
BG
= 16 V
E
BL
Non-repetitive clamping energy
T
j
= 150C prior to turn-off
-
75
mJ
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge capacitor
voltage
Human body model;
C = 250 pF; R = 1.5 k
-
2
kV
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Thermal resistance
4
R
th j-mb
Junction to mounting base
-
-
2.5
3
K/W
1
For normal continuous operation. A higher T
j
is allowed as an overload condition but at the threshold T
j(TO)
the over temperature trip operates
to protect the switch.
2
Reverse battery voltage is allowed only with external resistors to limit the input and status currents to a safe value. The connected load must
limit the reverse load current. The internal ground resistor limits the reverse battery ground current. Power is dissipated and the T
j
rating must be observed.
3
To limit currents during reverse battery and transient overvoltages (positive or negative).
4
Of the output power MOS transistor.
July 2001
2
Rev 2.000
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK220-50Y /T3 功能描述:電源開(kāi)關(guān) IC - 配電 TAPE13 TOPFET2 RoHS:否 制造商:Exar 輸出端數(shù)量:1 開(kāi)啟電阻（最大值）:85 mOhms 開(kāi)啟時(shí)間（最大值）:400 us 關(guān)閉時(shí)間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5
BUK220-50Y,118 功能描述:電源開(kāi)關(guān) IC - 配電 TAPE13 TOPFET2 RoHS:否 制造商:Exar 輸出端數(shù)量:1 開(kāi)啟電阻（最大值）:85 mOhms 開(kāi)啟時(shí)間（最大值）:400 us 關(guān)閉時(shí)間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5
BUK22150DY 制造商:NXP SEMI 功能描述:New
BUK221-50DY 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual channel high-side TOPFET
BUK221-50DY,118 功能描述:MOSFET N-CH 50V 4A SOT427 RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 內(nèi)部開(kāi)關(guān) 系列:TOPFET™ 標(biāo)準(zhǔn)包裝:1,000 系列:- 類型:高端/低端驅(qū)動(dòng)器 輸入類型:SPI 輸出數(shù):8 導(dǎo)通狀態(tài)電阻:850 毫歐，1.6 歐姆 電流 - 輸出 / 通道:205mA，410mA 電流 - 峰值輸出:500mA，1A 電源電壓:9 V ~ 16 V 工作溫度:-40°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 供應(yīng)商設(shè)備封裝:PG-DSO-20-45 包裝:帶卷 (TR)
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