參數(shù)資料
型號: BUK219-50Y
廠商: NXP SEMICONDUCTORS
元件分類: 外設(shè)及接口
英文描述: PowerMOS transistor TOPFET high side switch
中文描述: BUF OR INV BASED PRPHL DRVR, PSFM5
封裝: PLASTIC, TO-220, SOT-263B-01, SEP-5
文件頁數(shù): 4/8頁
文件大?。?/td> 48K
代理商: BUK219-50Y
Philips Semiconductors
Product Specification
PowerMOS transistor
TOPFET high side switch
BUK219-50Y
INPUT CHARACTERISTICS
9 V
V
BG
16 V. Limits are at -40
C
T
mb
150
C and typicals at T
mb
= 25
C unless otherwise stated.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
I
Input current
V
IG
= 5 V
20
90
160
μ
A
V
IG
Input clamping voltage
I
I
= 200
μ
A
5.5
7
8.5
V
V
IG(ON)
Input turn-on threshold voltage
-
2.4
3
V
V
IG(OFF)
Input turn-off threshold voltage
1.5
2.1
-
V
V
IG
Input turn-on hysteresis
-
0.3
-
V
I
I(ON)
Input turn-on current
V
IG
= 3 V
-
-
100
μ
A
I
I(OFF)
Input turn-off current
V
IG
= 1.5 V
10
-
-
μ
A
STATUS CHARACTERISTICS
The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high.
Limits are at -40
C
T
mb
150
C and typicals at T
mb
= 25
C unless otherwise stated. Refer to
TRUTH TABLE
.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
SG
V
SG
Status clamping voltage
Status low voltage
I
S
= 100
μ
A
I
S
= 100
μ
A
5.5
-
-
7
-
8.5
1
0.8
V
V
V
T
mb
= 25
C
0.7
I
S
Status leakage current
V
SG
= 5 V
-
-
2
-
15
1
12
μ
A
μ
A
mA
T
mb
= 25
C
0.1
7
I
S
Status saturation current
1
V
SG
= 5 V
Application information
External pull-up resistor
R
S
-
47
-
k
OPEN CIRCUIT DETECTION CHARACTERISTICS
An open circuit load can be detected in the on-state. Refer to
TRUTH TABLE
.
Limits are at -40
C
T
mb
150
C and typical is at T
mb
= 25
C.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Open circuit detection
9 V
V
BG
35 V
I
L(TO)
Low current detect threshold
50
85
-
340
255
mA
mA
T
j
= 25
C
170
I
L(TO)
Hysteresis
-
30
-
mA
1
In a fault condition with the pull-up resistor short circuited while the status transistor is conducting. This condition should be avoided in order to
prevent possible interference with normal operation of the device.
July 2001
4
Rev 2.000
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