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參數(shù)資料
| 型號： | BUK218-50DY |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | TOPFET dual high side switch |
| 中文描述： | 8 A 2 CHANNEL, BUF OR INV BASED PRPHL DRVR, PSSO6 |
| 封裝： | PLASTIC, SOT-427, D2PAK-7 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 64K |
| 代理商： | BUK218-50DY |
Philips Semiconductors
Product specification
TOPFET dual high side switch
BUK218-50DY
THERMAL CHARACTERISTIC
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Thermal resistance
1
R
th j-mb
Junction to mounting base
per channel
both channels
-
-
2.4
1.2
3
K/W
K/W
1.5
STATIC CHARACTERISTICS
Limits are at -40C
≤
T
mb
≤
150C and typicals at T
mb
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Clamping voltages
Battery to ground
Battery to load per channel
Ground to load
2
V
BG
V
BL
V
GL
I
G
= 1 mA
I
L
= I
G
= 1 mA
I
L
= 10 mA
I
L
= 10 A; t
p
= 300
μ
s
45
50
18
20
55
55
23
25
65
65
28
30
V
V
V
V
Supply voltage
Operating range
3
battery to ground
-
V
BG
5.5
-
35
V
Currents
Total quiescent current
4
9 V
≤
V
BG
≤
35 V
V
LG
= 0 V
I
B
-
-
-
-
-
-
8
-
20
1
10
1
3
6
-
μ
A
μ
A
μ
A
μ
A
mA
mA
A
T
mb
= 25C
0.1
-
0.1
1.8
3.6
-
I
L
Off-state load current per
channel
Operating current
V
BL
= V
BG
T
mb
= 25C
I
G
one channel on
both channels on
V
BL
= 0.5 V; T
mb
= 85C
I
L
Nominal load current
5
R
G
Effective internal ground
resistance
6
I
G
= -200 mA; t
p
= 300
μ
s
40
75
100
Resistances per channel
V
BG
I
L
t
p
7
T
j
R
ON
On-state resistance
9 to 35 V
10 A
300
μ
s
25C
150C
25C
150C
-
-
-
-
30
60
50
100
40
80
60
120
m
m
m
m
R
ON
On-state resistance
5.5 V
5 A
300
μ
s
1
Of the output Power MOS transistors.
2
For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. This negative voltage
is clamped by the device.
3
On-state resistance is increased if the supply voltage is less than 7 V.
4
This is the continuous current drawn from the battery when both inputs are low and includes leakage currents to the loads.
5
Per channel but with both channels conducting. Defined as in ISO 10483-1.
6
Equivalent of the parallel connected resistors for both channels.
7
The supply and input voltage for the R
ON
tests are continuous. The specified pulse duration t
p
refers only to the applied load current.
May 2001
3
Rev 1.400
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| BUK218-50DY /T3 | 功能描述:電源開關(guān) IC - 配電 TAPE13 PWR-MOS RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時間（最大值）:400 us 關(guān)閉時間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
| BUK218-50DY,118 | 功能描述:電源開關(guān) IC - 配電 TAPE13 PWR-MOS RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時間（最大值）:400 us 關(guān)閉時間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
| BUK219-50Y | 功能描述:電源開關(guān) IC - 配電 RAIL TOPFET2 RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時間（最大值）:400 us 關(guān)閉時間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
| BUK219-50Y,127 | 功能描述:電源開關(guān) IC - 配電 BUK219-50Y/SOT263/RAILH// RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時間（最大值）:400 us 關(guān)閉時間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
| BUK220-50Y | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TOPFET high side switch SMD version of BUK219-50Y |
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