參數(shù)資料
型號: BUJ301A
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon Diffused Power Transistor
中文描述: 0.5 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 2/4頁
文件大?。?/td> 18K
代理商: BUJ301A
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BUJ301A
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
1
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
= 5 V; I
= 0 A
I
= 0 A; I
C
= 100 mA;
L = 25 mH
I
C
= 0.1 A; I
B
= 10 mA
I
C
= 0.2 A; I
=20 mA
I
C
= 10 mA; V
CE
= 5 V
MIN.
-
-
TYP.
-
-
MAX.
0.1
1.0
UNIT
mA
mA
I
EBO
V
CEOsust
Emitter cut-off current
Collector-emitter sustaining voltage
-
-
-
1
-
mA
V
500
V
CEsat
V
BEsat
h
FE
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
-
-
-
-
-
0.8
1.0
35
V
V
10
DYNAMIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
Switching times (resistive load)
CONDITIONS
I
Con
= 0.2 A; I
= -I
= 20 mA;
R
L
= 75 ohms; V
BB2
= 4 V;
TYP.
MAX.
UNIT
t
on
t
s
t
f
Turn-on time
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
-
-
-
1.0
4
0.8
μ
s
μ
s
μ
s
I
= 0.2 A; I
Bon
= 20m A; L
B
= 1
μ
H;
-V
BB
= 5 V
t
s
t
f
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
-
1.5
160
μ
s
ns
145
I
= 0.2 A; I
Bon
= 20m A; L
B
= 1
μ
H;
-V
BB
= 5 V; T
j
t
s
t
f
Turn-off storage time
Turn-off fall time
-
-
1.8
200
μ
s
ns
1
Measured with half sine-wave voltage (curve tracer).
August 1998
2
Rev 1.000
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