參數(shù)資料
型號: BUH313
英文描述: TRANSISTOR | BJT | NPN | 600V V(BR)CEO | 5A I(C) | TO-218
中文描述: 晶體管|晶體管|叩| 600V的五(巴西)總裁| 5A條一(c)|至218
文件頁數(shù): 2/7頁
文件大?。?/td> 216K
代理商: BUH313
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
3.125
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
μ
A
I
CES
Collector Cut-off
Current (V
BE
= 0)
Emitter Cut-off Current
(I
C
= 0)
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current Gain
V
CE
= 1500 V
200
I
EBO
V
EB
= 5 V
300
mA
V
CE(sat)
I
C
= 3 A I
B
= 1 A
1.5
V
V
BE(sat)
I
C
= 3 A I
B
= 1 A
1.5
V
h
FE
I
C
= 3 A V
CE
= 5 V
I
C
= 3 A V
CE
= 5 V T
j
= 100
o
C
V
CC
= 400 V I
C
= 3 A
I
B1
= 1 A I
B2
= -1.5 A
4
2.5
9
t
s
t
f
RESISTIVE LOAD
Storage Time
Fall Time
1.8
200
2.7
300
μ
s
ns
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
I
C
= 3 A f = 15625 Hz
I
B1
= 1 A I
B2
= 1.5 A
V
ceflyback
= 1050 sin
π
5 10
6
t V
2.7
350
μ
s
ns
V
F
Diode Forward Voltage
I
F
= 3 A
2.5
V
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
Safe Operating Area
Thermal Impedance
BUH315DFH
2/7
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