BUF04
WAFER TEST LIMITS
REV. 0
–4–
Parameter
Symbol
Conditions
Limit
Units
Offset Voltage
V
OS
V
OS
I
B
PSRR
V
O
I
SY
A
VCL
V
S
=
±
15 V
V
S
=
±
5 V
V
CM
= 0 V
V =
±
4.5 V to
±
18 V
R
L
= 150
V
O
= 0 V, R
L
= 2 k
V
O
=
±
10 V, R
L
= 2 k
1
2
5
76
±
10.5
8.5
1
±
0.005
mV max
mV max
μ
A max
dB
V min
mA max
V/V
Input Bias Current
Power Supply Rejection Ratio
Output Voltage Range
Supply Current
Gain
NOTE
Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard
product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±
18 V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±
18 V
Maximum Power Dissipation . . . . . . . . . . . . . . . See Figure 16
Storage Temperature Range
Z Package . . . . . . . . . . . . . . . . . . . . . . . . . –65
°
C to +175
°
C
P, S Package . . . . . . . . . . . . . . . . . . . . . . . –65
°
C to +150
°
C
Operating Temperature Range
BUF04Z . . . . . . . . . . . . . . . . . . . . . . . . . . –55
°
C to +125
°
C
BUF04S, P . . . . . . . . . . . . . . . . . . . . . . . . . –40
°
C to +85
°
C
Junction Temperature Range
Z Package . . . . . . . . . . . . . . . . . . . . . . . . . –65
°
C to +150
°
C
P, S Package . . . . . . . . . . . . . . . . . . . . . . . –65
°
C to +150
°
C
Lead Temperature Range (Soldering 60 sec) . . . . . . . . +300
°
C
Package Type
θ
JA2
θ
JC
Units
8-Pin Cerdip (Z)
8-Pin Plastic DIP (P)
8-Pin SOIC (S)
148
103
158
16
43
43
°
C/W
°
C/W
°
C/W
NOTES
1
Absolute maximum ratings apply to both DICE and packaged parts, unless
otherwise noted.
2
θ
JA
is specified for the worst case conditions, i.e.,
θ
JA
is specified for device in socket
for cerdip, P-DIP, and LCC packages;
θ
JA
is specified for device soldered in circuit
board for SOIC package.
ORDERING GUIDE
Temperature
Range
Package
Description
Package
Option
Model
BUF04AZ/883
BUF04GP
BUF04GS
BUF04GBC
–55
°
C to +125
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
+25
°
C
Cerdip
Plastic DIP
SO
DICE
Q-8
N-8
SO-8
DICE
DICE CHARACTERISTICS
BUF04 Die Size 0.075 x 0.064 inch, 5,280 Sq. Mils
Substrate (Die Backside) Is Connected to V+
Transistor Count 45.
(@ V
S
=
6
15.0 V, T
A
= +25
8
C unless otherwise noted)