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參數(shù)資料
| 型號： | BU931L-T3P-K |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | NPN POWER DARLINGTON |
| 中文描述： | 達林頓NPN電源 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 118K |
| 代理商： | BU931L-T3P-K |
BU931
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R214-012,A
2 of 5
ABS OLUT E MAX IMUM RAT INGS
(Ta=25
)
PARAMETER
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
D
T
J
T
STG
RATINGS
500
400
5
15
30
1
5
175
+200
-65 ~ +200
UNIT
V
V
V
A
A
A
A
W
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current
Base Current
Base Peak Current
Total Dissipation (Tc = 25
Junction Temperature
Storage Temperature
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
)
T HERMAL DAT A
PARAMETER
SYMBOL
θ
JC
RATING
1.1
UNIT
/W
Thermal Resistance Junction-Case Max
ELECT RICAL CHARACT ERIS T ICS
PARAMETER
SYMBOL
TEST CONDITIONS
V
CE
= 450 V
V
CE
= 450 V, T
J
= 125
V
EB
= 5 V
I
C
= 7 A, I
B
= 70 mA
I
C
= 8 A, I
B
= 100 mA
MIN TYP MAX UNIT
300
100
0.5
20
1.6
1.8
1.8
2.2
2.4
2.5
μA
mA
mA
V
V
V
V
V
V
Collector Cut-off Current (I
B
= 0)
I
CEO
Emitter Cut-off Current (I
C
= 0)
I
EBO
Collector-Emitter Saturation Voltage(Note)
V
CE(SAT)
I
C
= 10 A, I
B
= 250 mA
I
C
= 7 A, I
B
= 70 mA
I
C
= 8 A, I
B
= 100 mA
I
C
= 10 A, I
B
= 250 mA
I
C
= 5 A, V
CE
= 10 V
I
F
= 10 A
V
CC
= 24 V, V
clamp
= 400 V
L = 7 mH
V
CC
= 12 V, V
clamp
= 300 V
L = 7 mH
I
C
= 7 A, I
B
= 70 mA
V
BE
= 0, R
BE
= 47
Base-Emitter Saturation Voltage(Note)
V
BE(SAT)
DC Current Gain
Diode Forward Voltage
h
FE
V
F
2.5
V
Functional Test
8
A
Inductive Load Storage Time / Fall Time
t
S
t
F
15
0.5
μs
μs
Note: Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BU931L-T3P-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN POWER DARLINGTON |
| BU931P | 功能描述:達林頓晶體管 NPN Power Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| BU931PFI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| BU931R | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
| BU931RP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 400V V(BR)CEO | 15A I(C) | TO-218 |
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