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參數(shù)資料
| 型號： | BU52040HFV-TR |
| 廠商： | Rohm Semiconductor |
| 文件頁數(shù)： | 5/15頁 |
| 文件大?。?/td> | 465K |
| 描述： | IC HALL EFFECT BIPO LATCH HVSOF5 |
| 特色產(chǎn)品： | ROHM Hall Effect Sensor ICs |
| 標準包裝： | 1 |
| 傳感范圍： | 5mT 跳閘，-5mT 釋放 |
| 類型： | 雙極卡鎖 |
| 電源電壓： | 1.65 V ~ 3.3 V |
| 電流 - 電源： | 300µA |
| 電流 - 輸出（最大）： | ±0.5mA |
| 輸出類型： | 數(shù)字，開路集電極 |
| 工作溫度： | -40°C ~ 85°C |
| 封裝/外殼： | SOT-665 |
| 供應商設(shè)備封裝： | 5-HVSOF |
| 包裝： | 標準包裝 |
| 其它名稱： | BU52040HFV-DKR BU52040HFV-DKR-ND BU52040HFVDKR |
BU52040HFV
Technical Note
5/12
www.rohm.com
2010.01 - Rev.B
?2010 ROHM Co., Ltd. All rights reserved.
?SPAN class="pst BU52040HFV-TR_2601631_6">Description of Operations
(Micro-power Operation)
The Hall Effect IC for wheel keys / trackballs adopts an intermittent operation method to save energy. At startup, the Hall
elements, amp, comparator and other detection circuits power ON and magnetic detection begins. During standby, the
detection circuits power OFF, thereby reducing current consumption. The detection results are held while standby is active,
and then output.
Reference period: 500 祍 (MAX. 1200 祍)
Reference startup time: 24 祍
Fig.13
(Offset Cancellation)
The Hall elements form an equivalent Wheatstone (resistor) bridge circuit. Offset voltage may be generated by a
differential in this bridge resistance, or can arise from changes in resistance due to package or bonding stress.
A dynamic offset cancellation circuit is employed to cancel this offset voltage.
When Hall elements are connected as shown in Fig. 14 and a magnetic field is applied perpendicularly to the Hall
elements, voltage is generated at the mid-point terminal of the bridge. This is known as the Hall voltage.
Dynamic cancellation switches the wiring (shown in the figure) to redirect the current flow to a 90?angle from its original
path, and thereby cancels the Hall voltage.
The magnetic signal (only) is maintained in the sample/hold circuit during the offset cancellation process and then
released.
I
DD
Standby
Startup time
Period
t
GND
V
DD
I
B
?
Hall Voltage
Fig.14
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| BU52051NVX | 制造商:ROHM 制造商全稱:Rohm 功能描述:Omnipolar Detection Hall ICs |
| BU52051NVX-TR | 功能描述:板機接口霍耳效應/磁性傳感器 1.65-5.5V CMOS Out Bipolar Detect Latch RoHS:否 制造商:Honeywell 類型:Bipolar Hall-Effect Digital Position Sensor 工作電源電壓:3 V to 24 V 電源電流:3.5 mA 最大輸出電流:20 mA 工作點最小值/最大值:5 G, 55 G 最小/最大釋放點（Brp）:- 55 G, - 5 G 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23 |
| BU52053NVX | 制造商:ROHM 制造商全稱:Rohm 功能描述:Omnipolar Detection Hall ICs |
| BU52053NVX-TR | 功能描述:板機接口霍耳效應/磁性傳感器 Omnipolar Detection Hall IC RoHS:否 制造商:Honeywell 類型:Bipolar Hall-Effect Digital Position Sensor 工作電源電壓:3 V to 24 V 電源電流:3.5 mA 最大輸出電流:20 mA 工作點最小值/最大值:5 G, 55 G 最小/最大釋放點（Brp）:- 55 G, - 5 G 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23 |
| BU52054GWZ | 制造商:ROHM 制造商全稱:Rohm 功能描述:Omnipolar Detection Hall ICs |
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