參數(shù)資料
型號(hào): BU506F
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管)
中文描述: 5 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-220
封裝: PLASTIC PACKAGE-3
文件頁(yè)數(shù): 7/12頁(yè)
文件大?。?/td> 83K
代理商: BU506F
1997 Aug 14
6
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU506F; BU506DF
Fig.8
Collector-emitter saturation voltage as a
function of collector current; typical values.
I
C
/I
B
= 2; T
j
= 25
°
C.
handbook, halfpage
0
10
2
10
1
1
10
MGB886
1
VCEsat
(V)
IC (A)
Fig.9
Base-emitter saturation voltage as a
function of base current; typical values.
T
j
= 25
°
C.
(1) I
C
= 3 A.
(2) I
C
= 2 A.
(3) I
C
= 1 A.
handbook, halfpage
MGB901
0
3
0
0.8
0.4
2
1
VBEsat
(V)
IB (A)
(1)
(2)
(3)
Fig.10 DC current gain; typical values.
V
CE
= 5 V; T
j
= 25
°
C.
handbook, halfpage
10
2
10
1
1
2
10
1
hFE
IC (A)
10
MGB877
Fig.11 Switching time waveforms.
handbook, halfpage
MBH382
time
time
IB (end)
10%
90%
ts
tf
iC
ICsat
iB
相關(guān)PDF資料
PDF描述
BU506DF Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管)
BU506 Silicon diffused power transistors
BU506D Silicon diffused power transistors
BU5071
BU508AD TRANSISTOR | BJT | NPN | 700V V(BR)CEO | 8A I(C) | TO-218AC
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