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參數(shù)資料
| 型號(hào)： | BU4530AW |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor(硅功率擴(kuò)散晶體管) |
| 中文描述： | 16 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-247 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 24K |
| 代理商： | BU4530AW |
Philips Semiconductors
Object specification
Silicon Diffused Power Transistor
BU4530AW
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope
intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
CONDITIONS
V
BE
= 0
TYP.
-
-
-
-
-
-
10
8
t.b.f
t.b.f
MAX.
1500
800
16
40
125
3.0
-
-
t.b.f
t.b.f
UNIT
V
V
A
A
W
V
A
A
μ
s
μ
s
T
mb
≤
25 C
I
B
= 2.5 A
f = 32 kHz
f = 90 kHz
I
Csat
= 10.0 A; f = 32 kHz
I
Csat
= 8 A; f = 90 kHz
t
f
Fall time
PINNING - SOT429
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
tab
collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector-emitter voltage peak value
V
CEO
Collector-emitter voltage (open base)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
-I
BM
Reverse base current peak value
1
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
16
40
10
15
10
125
150
150
UNIT
V
V
A
A
A
A
A
W
C
C
T
mb
≤
25 C
2
3
1
b
c
e
1
Turn-off current.
January 1998
1
Rev 1.000
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BU4530AX | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4538B | 功能描述:單穩(wěn)態(tài)多諧振蕩器 ONE-SHOT DUAL RoHS:否 制造商:Texas Instruments 每芯片元件:1 邏輯系列:LVC 邏輯類型:Monostable Multivibrator 封裝 / 箱體:SSOP-8 傳播延遲時(shí)間:18.6 ns 高電平輸出電流:- 32 mA 低電平輸出電流:32 mA 電源電壓-最大:5.5 V 電源電壓-最小:1.65 V 最大功率耗散: 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝:Reel |
| BU4538B-E2 | 制造商:ROHM 制造商全稱:Rohm 功能描述:High Voltage CMOS Logic ICs |
| BU4538BF | 制造商:ROHM 制造商全稱:Rohm 功能描述:High Voltage CMOS Logic ICs |
| BU4538BF-E2 | 制造商:ROHM 制造商全稱:Rohm 功能描述:High Voltage CMOS Logic ICs |
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