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參數(shù)資料
| 型號(hào)： | BU406-X-TF3-T |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | SILICON NPN SWITCHING TRANSISTOR |
| 中文描述： | 硅NPN開關(guān)晶體管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 161K |
| 代理商： | BU406-X-TF3-T |
BU406
NPN PLANAR TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R203-021,D
2 of 4
ABS OLUT E MAX IMUM RAT ING
PARAMETER
SYMBOL
V
CBO
V
CEV
V
CEO
V
EBO
I
C
I
CM
I
CM
I
B
P
C
T
J
T
STG
RATINGS
400
400
200
6
7
10
15
4
60
150
-65 ~ +150
UNIT
V
V
V
V
A
A
A
A
W
Collector-Base Voltage (I
E
=0)
Collector-Emitter Voltage (V
BE
=-1.5V)
Collector-Emitter Voltage (I
B
=0)
Emitter-Base Voltage (I
C
=0)
Collector Current
Collector Peak Current (repetitive)
Collector Peak Current (tp=10ms)
Base Current
Collector Dissipation (T
C
≤
25
Junction Temperature
Storage Temperature
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
)
T HERMAL DAT A
PARAMETER
SYMBOL
θ
JA
θ
JC
RATINGS
70
2.08
UNIT
/W
/W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
ELECT RICAL CHARACT ERIST ICS
(Ta=25
)
PARAMETER
SYMBOL
TEST CONDITIONS
V
CE
=400V
V
CE
=250V T
C
=150
°
C
V
CE
=250V
V
BE
=6V
I
C
=5A, I
B
=0.5A
I
C
=5A, I
B
=0.5A
V
CE
=10V, I
C
=500mA
I
C
=500mA, V
CE
=10V
I
C
=5A, I
B
=0.5A
V
CE
=40V, t=10ms
MIN
TYP
MAX
5
100
1
1
1
1.2
240
0.75
UNIT
mA
μ
A
mA
mA
V
V
Collect Cutoff Current (V
BE
=0)
I
CES
Emitter Cut-off Current (I
C
=0)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Turn-off Time
Second Breakdown Collector Current
Pulse duration=300
μ
s, duty cycle 1.5%
I
EBO
V
CE(SAT)*
V
BE(SAT)*
h
FE
f
T
t
OFF
Is/b
70
10
MHz
μ
s
A
4
CLAS S IFICAT ION OF h
FE
RANK
RANGE
A
B
70 ~ 120
110 ~ 240
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