參數(shù)資料
型號(hào): BU303AX
廠商: NXP Semiconductors N.V.
英文描述: Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管)
中文描述: 擴(kuò)散硅功率晶體管(硅擴(kuò)散功率型晶體管)
文件頁(yè)數(shù): 6/7頁(yè)
文件大?。?/td> 74K
代理商: BU303AX
Philips Semiconductors
Preliminary specification
Silicon Diffused Power Transistor
BUJ303AX
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.16. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10.3
max
3.2
3.0
4.6
max
2.9 max
2.8
seating
plane
6.4
15.8
max
0.6
2.5
2.54
5.08
1
2
3
3 max.
not tinned
3
0.5
2.5
0.9
0.7
M
0.4
15.8
max.
19
13.5
min.
Recesses (2x)
2.5
0.8 max. depth
1.0 (2x)
1.3
August 1998
6
Rev 1.000
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