參數(shù)資料
型號: BU2720DX
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon Diffused Power Transistor
中文描述: 10 A, 825 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, SOT-399, 3 PIN
文件頁數(shù): 4/7頁
文件大小: 73K
代理商: BU2720DX
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2720DX
Fig.5. DC current gain. h
FE
= f (I
C
)
Parameter T
(Low and high gain)
Fig.6. Typical collector-emitter saturation voltage.
V
CEsat
= f (I
C
); parameter I
C
/I
B
Fig.7. Typical base-emitter saturation voltage.
V
BEsat
= f (I
B
); parameter I
C
Fig.8. Limit P
; T
= 85C
P
tot
= f (I
B(end)
); I
C
= 4.5 A; f = 16 kHz
Fig.9. Limit P
; T
= 85C
P
tot
= f (I
B(end)
); I
C
= 5.5 A; f = 16 kHz
Fig.10. Limit storage and fall time.
t
s
= f (I
B
); tf = f (I
B
); parameter I
C
; T
hs
= 85C; f = 16 kHz
BU2720/22DF
0.01
0.1
1
10
100
1
10
100
Ths = 25 C
Ths = 85 C
VCE = 1 V
hFE
IC / A
BU2720DF
0
0.5
1
1.5
2
1
10
100
PTOT / W
IB / A
IC = 4.5 A
f = 16 kHz
Ths = 85 C
BU2720DF
0.01
0.1
1
10
0.1
1
10
100
Ths = 85 C
Ths = 25 C
IC/IB = 8
IC/IB = 4
VCEsat / V
IC / A
BU2720DF
1
10
100
PTOT / W
IB / A
IC = 5.5 A
f = 16 kHz
Ths = 85 C
0.5
1
1.5
2
2.5
0
0.5
1
1.5
2
0.6
0.7
0.8
0.9
1
Ths = 25 C
Ths = 85 C
IC = 5.5 A
4.5 A
VBEsat / V
BU2720DF
IB / A
0.5
1
1.5
2
2.5
0
2
4
6
8
10
12
ts/tf / us
BU2720AF
IC = 5.5 A
IC = 4.5 A
IB / A
September 1997
4
Rev 1.300
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