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參數(shù)資料
| 型號(hào)： | BU2523AX |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 11 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, SOT-399, 3 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 66K |
| 代理商： | BU2523AX |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2523AX
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
Repetitive peak voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
R.H.
≤
65 % ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
-
22
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
2
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
= 7.5 V; I
C
= 0 A
I
B
= 1 mA
I
= 0 A; I
C
= 100 mA;
L = 25 mH
I
C
= 5.5 A; I
B
= 1.1 A
I
C
= 5.5 A; I
B
= 1.1 A
I
C
= 1 A; V
= 5 V
I
C
= 5.5 A; V
CE
= 5 V
MIN.
-
-
TYP.
-
-
MAX.
1.0
2.0
UNIT
mA
mA
I
BV
EBO
V
CEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
-
-
1.0
-
-
mA
V
V
7.5
800
13.5
-
V
CEsat
V
BEsat
h
FE
h
FE
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
-
-
5.0
0.97
-
10.3
V
V
0.80
-
5
0.88
14
8
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
Switching times (64 kHz line
deflection circuit)
CONDITIONS
I
Csat
= 5.5 A; L
C
= 200
μ
H; C
fb
= 4 nF;
V
CC
145 V; I
= 0.56 A;
L
B
= 0.4
μ
H; -V
BB
= -4 V; -I
BM
= 3.3 A
TYP.
MAX.
UNIT
t
s
t
f
Turn-off storage time
Turn-off fall time
1.5
0.15
2.0
0.3
μ
s
μ
s
Fig.1. Switching times waveforms.
Fig.2. Switching times definitions.
CE
ICsat
B
16 us
6.5 us
5 us
t
t
t
TRANSISTOR
DIODE
IC
IB
ICsat
90 %
10 %
tf
ts
IBend
IC
IB
t
t
- IBM
2
Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.100
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| BU2523DF | Silicon Diffused Power Transistor |
| BU2523DX | Silicon Diffused Power Transistor |
| BU2525AF | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
| BU2525AW | INDUCTOR 1UH LOW PROFILE HIGH CURRENT |
| BU2525AX | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BU2523DF | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU2523DX | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU2525A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU2525AF | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| BU2525AF/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR ISOLATED SOT199 |
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