參數(shù)資料
型號: BU2522
廠商: NXP Semiconductors N.V.
英文描述: Silicon Diffused Power Transistor
中文描述: 擴散硅功率晶體管
文件頁數(shù): 4/7頁
文件大小: 55K
代理商: BU2522
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2522A
Fig.9. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
C
); parameter I
C
/I
B
Fig.10. Typical base-emitter saturation voltage.
V
BE
sat = f (I
B
); parameter I
C
Fig.11. Typical turn-off losses.T
= 85C
Poff = f (I
B
); parameter I
C
; f = 64 kHz
Fig.12. Typical collector storage and fall time.
ts = f (I
B
); tf = f (I
B
); parameter I
C
; T
j
= 85C; f = 64 kHz
Fig.13. Normalised power dissipation.
PD% = 100
P
D
/P
D 25C
= f (T
mb
)
Fig.14. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
0.1
10
IC / A
VCESAT / V
10
1
0.1
0.01
100
1
BU2522A
Tj = 25 C
Tj = 85 C
IC/IB =
3
5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
IB / A
ts, tf / us
BU2522AF
4
3.5
3
2.5
2
1.5
1
0.5
0
IC =
6A
5A
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
IB / A
1.2
1.1
1
0.9
0.8
0.7
0.6
BU2522A
VBESAT / V
Tj = 25 C
Tj = 85 C
IC =
7A
6A
5A
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
IB / A
Poff / W
BU2522AF
100
10
1
IC =
6A
5A
1E-06
1E-04
1E-02
1E+00
t / s
Zth / (K/W)
10
1
0.1
0.01
0.001
D =
t
p
t
p
T
T
P
D
t
D = 0
0.02
0.05
0.1
0.2
0.5
November 1995
4
Rev 1.100
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相關代理商/技術參數(shù)
參數(shù)描述
BU2522A 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor
BU2522AF 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors
BU2522AF/B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR ISOLATED SOT199
BU2522AW 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor
BU2522AX 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon NPN Power Transistors