參數(shù)資料
型號: BU2520DF
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon Diffused Power Transistor(硅擴散功率型晶體管)
中文描述: 10 A, 800 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, SOT-199, 3 PIN
文件頁數(shù): 5/7頁
文件大小: 68K
代理商: BU2520DF
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520DF
Fig.13. Forward bias safe operating area.T
= 25 C
I
& I
= f(V
); I
single pulse; parameter t
Second-breakdown limits independant of temperature.
Mounted with heatsink compound.
BU2520AF
IC / A
100
10
1
0.1
0.01
1
10
100
1000
VCE / V
100 us
1 ms
10 ms
DC
30 us
tp =
Ptot
ICM
ICDC
= 0.01
September 1997
5
Rev 1.400
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