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參數(shù)資料
| 型號(hào)： | BU2508DW |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 8 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-247 |
| 封裝： | PLASTIC, SOT-429, 3 PIN |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 69K |
| 代理商： | BU2508DW |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508DW
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
2
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
= 7.5 V; I
C
= 0 A
I
B
= 600 mA
V
= 7.5 V
I
= 0 A; I
C
= 100 mA;
L = 25 mH
I
C
= 4.5 A; I
B
= 1.12 A
I
C
= 4.5 A; I
B
= 1.7 A
I
C
= 1 A; V
= 5 V
I
C
= 4.5 A; V
CE
= 1 V
I
F
= 4.5 A
MIN.
-
-
TYP.
-
-
MAX.
1.0
2.0
UNIT
mA
mA
I
BV
EBO
R
be
V
CEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Base-emitter resistance
Collector-emitter sustaining voltage
140
7.5
-
700
-
390
-
-
-
mA
V
V
13.5
33
-
V
CEsat
V
BEsat
h
FE
h
FE
V
F
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
-
-
-
4
-
-
-
1.0
1.1
-
7.0
2.0
V
V
13
5.5
1.6
Diode forward voltage
V
DYNAMIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
C
c
Collector capacitance
Switching times (16 kHz line
deflection circuit)
t
s
Turn-off storage time
t
f
Turn-off fall time
Switching times (38 kHz line
deflection circuit)
t
s
Turn-off storage time
t
f
Turn-off fall time
CONDITIONS
I
E
= 0 A; V
CB
= 10 V; f = 1 MHz
I
= 4.5 A; I
B(end)
= 1.1 A; L
B
= 6
μ
H;
-V
BB
= 4 V; (-dI
B
μ
s)
TYP.
80
MAX.
-
UNIT
pF
5.0
0.4
6.0
0.6
μ
s
μ
s
I
= 4.0 A; I
B(end)
= 0.9 A; L
B
= 6
μ
H;
-V
BB
= 4 V; (-dI
B
μ
s)
4.7
0.25
5.7
0.35
μ
s
μ
s
Fig.1. Switching times waveforms.
Fig.2. Switching times definitions.
IC
IB
VCE
ICsat
IBend
64us
26us
20us
t
t
t
TRANSISTOR
DIODE
ICsat
90 %
10 %
tf
ts
IBend
IC
IB
t
t
- IBM
2
Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.100
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