參數(shù)資料
型號: BTS660-P
元件分類: TVS-瞬態(tài)抑制二極管
英文描述: Transient Voltage Suppressor Diodes
中文描述: ?9mOhm - Vbb(上)\u003d 5V的- 58V -的TO220 - 7 - 3?
文件頁數(shù): 3/16頁
文件大小: 232K
代理商: BTS660-P
Data Sheet BTS660P
Infineon Technologies AG
Page 3
2001-May-30
Thermal Characteristics
Parameter and Conditions
Symbol
Values
typ
Unit
min
max
0.75
Thermal resistance
chip - case
:
R
thJC
R
thJA
7
)
--
--
--
K/W
junction - ambient (free air):
SMD version, device on PCB
8)
:
60
33
--
Electrical Characteristics
Parameter and Conditions
at
T
j
=
-40 ... +150
°C,
V
bb
=
24
V unless otherwise specified
Symbol
Values
typ
Unit
min
max
Load Switching Capabilities and Characteristics
On-state resistance
(Tab to pins 1,2,6,7, see
measurement circuit page 7)
V
IN
=
0,
I
L
=
20
A
,
T
j
=
150
°C:
I
L
=
20
A,
T
j
=
25
°C:
R
ON
--
7.2
14.6
9
17
17
22
--
m
I
L
=
80
A
,
T
j
=
150
°C:
V
bb
=6V,
I
L
=20A,
T
j
=150°C:
R
ON(Static)
--
17
44
Nominal load current
9
)
(Tab to pins 1,2,6,7)
ISO 10483-1/6.7:
V
ON
=
0.5
V,
T
c =
85
°C
10
)
Nominal load current
9)
, device on PCB
8))
T
A
= 85 °C,
T
j
150 °C
V
ON
0.5 V,
Maximum load current in resistive range
(Tab to pins 1,2,6,7)
see diagram on page 13
Turn-on time
11
)
Turn-off time
R
L
=
1
,
T
j
=-40...+150°C
Slew rate on
11)
(10 to 30%
V
OUT
)
R
L
=
1
Slew rate off
11)
(70 to 40%
V
OUT
)
R
L
=
1
I
L(ISO)
38
A
I
L(NOM)
9.9
11.1
--
A
V
ON
=
1.8
V,
T
c =
25
°C:
V
ON
=
1.8
V,
T
c =
150
°C:
IIN
to 90%
V
OUT
:
IIN
to 10%
V
OUT
:
I
L(Max)
185
105
50
30
--
--
--
--
--
--
A
t
on
t
off
400
110
μ
s
d
V
/dt
on
1.0
1.5
2.2
V/
μ
s
-d
V
/dt
off
1.1
1.9
2.6
V/
μ
s
7
)
Thermal resistance R
thCH
case to heatsink (about 0.5 ... 0.9 K/W with silicone paste) not included!
8
)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70
μ
m thick) copper area for Vbb
connection. PCB is vertical without blown air.
9
)
Not tested, specified by design.
10
)
T
is about 105°C under these conditions.
11
)See timing diagram on page 14.
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