參數(shù)資料
型號(hào): BTS121-A
元件分類(lèi): TVS-瞬態(tài)抑制二極管
英文描述: Transient Voltage Suppressor Diodes
中文描述: ?N溝道TEMPFET?
文件頁(yè)數(shù): 2/10頁(yè)
文件大?。?/td> 459K
代理商: BTS121-A
TEMPFET
BTS 121 A
2
04.97
Electrical Characteristics
at
T
j
= 25
C, unless otherwise specified.
Parameter
Symbol
Values
typ.
Unit
min.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
= 0
, I
D
= 0.25 mA
Gate threshold voltage
V
GS
=
V
DS
, I
D
= 1 mA
Zero gate voltage drain current
V
GS
= 0 V,
V
DS
= 100
V
(BR)DSS
100
V
V
GS(th)
1.5
2.0
2.5
T
j
= 25
°
C
T
j
= 125
°
C
I
DSS
0.1
10
1.0
100
μ
A
Gate-source leakage current
V
GS
=
±
20 V,
V
DS
= 0
T
j
= 25
°
C
T
j
= 150
°
C
I
GSS
10
2
100
4
nA
μ
A
Drain-source on-state resistance
V
GS
= 4.5 V
, I
D
= 9.5 A
R
DS(on)
0.085
0.1
Dynamic Characteristics
Forward transconductance
V
DS
2
×
I
D
×
R
DS(on)max
,
I
D
= 9.5 A
Input capacitance
V
GS
= 0
, V
DS
= 25 V,
f
= 1 MHz
Output capacitance
V
GS
= 0
, V
DS
= 25 V,
f
= 1 MHz
Reverse transfer capacitance
V
GS
= 0
, V
DS
= 25 V,
f
= 1 MHz
Turn-on time
t
on
, (
t
on
=
t
d(on)
+
t
r
)
V
CC
= 30 V,
V
GS
= 5 V,
I
D
= 3 A,
R
GS
= 50
g
fs
8
14
S
C
iss
1200
1500
pF
C
oss
320
580
C
rss
160
260
t
d(on)
t
r
t
d(off)
t
f
25
40
ns
110
170
Turn-off time
t
off
, (
t
off
=
t
d(off)
+
t
f
)
V
CC
= 30 V,
V
GS
= 5 V,
I
D
= 3 A,
R
GS
= 50
210
270
100
130
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