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參數(shù)資料
| 型號： | BTS113-A |
| 元件分類： | TVS-瞬態(tài)抑制二極管 |
| 英文描述： | Transient Voltage Suppressor Diodes |
| 中文描述： | ？N溝道TEMPFET？ |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 442K |
| 代理商： | BTS113-A |
TEMPFET
BTS 115 A
3
04.97
Electrical Characteristics
(cont
’
d)
at
T
j
= 25
°
C, unless otherwise specified.
Parameter
Symbol
Values
typ.
Unit
min.
max.
Reverse Diode
Continuous source current
I
S
I
SM
V
SD
–
–
15.5
A
Pulsed source current
–
–
62
Diode forward on-voltage
I
F
= 34 A,
V
GS
= 0
Reverse recovery time
I
F
=
I
S
, d
i
F
/d
t
= 100 A/
μ
s,
V
R
= 30 V
Reverse recovery charge
I
F
=
I
S
, d
i
F
/d
t
= 100 A/
μ
s,
V
R
= 30 V
–
1.5
1.8
V
t
rr
–
60
–
ns
Q
rr
–
0.10
–
μ
C
Temperature Sensor
Forward voltage
I
TS(on)
= 5.0 mA,
T
j
=
–
55 ... + 150
°
C
Sensor override,
t
p
≤
100
μ
s
T
j
=
–
55 ... + 160
°
C
Forward current
T
j
=
–
55 ... + 150
°
C
Sensor override,
t
p
≤
100
μ
s
T
j
=
–
55 ... + 160
°
C
Holding current,
V
TS(off)
= 5 V,
V
TS(on)
–
1.3
–
1.4
10
V
I
TS(on)
–
–
–
–
5
600
mA
T
j
= 25
°
C
T
j
= 150
°
C
I
H
0.05
0.05
0.1
0.2
0.5
0.3
Switching temperature
V
TS
= 5 V
Turn-off time
V
TS
= 5 V,
I
TS(on)
= 2 mA
T
TS(on)
150
–
–
°
C
t
off
0.5
–
2.5
μ
s
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BTS113A E3045A | 功能描述:MOSFET N-Channel 60V TEMPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BTS113A E3064 | 功能描述:MOSFET N-Channel 60V TEMPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BTS113AE3045A | 制造商:Infineon Technologies AG 功能描述: |
| BTS113AE-3045A | 制造商:Siemens 功能描述:11.5 A, 60 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET |
| BTS113AE3045ANTMA1 | 功能描述:MOSFET TEMPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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