參數(shù)資料
型號: BTBA08-800B
元件分類: TVS-瞬態(tài)抑制二極管
英文描述: Transient Voltage Suppressor Diodes
中文描述: (67.91十一)
文件頁數(shù): 2/5頁
文件大?。?/td> 67K
代理商: BTBA08-800B
GATECHARACTERISTICS
(maximum values)
PG (AV)= 1W
PGM= 10W (tp = 20
μ
s)
Symbol
Parameter
Value
Unit
Rth (j-a)
Junction to ambient
60
°
C/W
Rth (j-c) DC Junction to case for DC
BTA
4.4
°
C/W
BTB
3.2
Rth (j-c) AC Junction to case for 360
°
conduction angle
( F= 50 Hz)
BTA
3.3
°
C/W
BTB
2.4
Symbol
Test Conditions
Quadrant
Suffix
Unit
B
C
IGT
VD=12V
(DC)
RL=33
Tj=25
°
C
I-II-III
MAX
50
25
mA
IV
MAX
100
50
VGT
VD=12V
(DC)
RL=33
Tj=25
°
C
I-II-III-IV
MAX
1.5
V
VGD
VD=VDRM RL=3.3k
Tj=110
°
C
I-II-III-IV
MIN
0.2
V
tgt
VD=VDRM
dIG/dt = 3A/
μ
s
IG= 500mA
Tj=25
°
C
I-II-III-IV
TYP
2
μ
s
IL
IG=1.2 IGT
Tj=25
°
C
I-III-IV
TYP
40
20
mA
II
70
35
IH*
IT= 500mA gate open
Tj=25
°
C
MAX
50
25
mA
VTM*
ITM= 11A
tp= 380
μ
s
Tj=25
°
C
MAX
1.75
V
IDRM
IRRM
VDRM
VRRM
Rated
Rated
Tj=25
°
C
MAX
0.01
mA
Tj=110
°
C
MAX
0.5
dV/dt *
Linear slope up to VD=67%VDRM
gate open
Tj=110
°
C
MIN
250
100
V/
μ
s
(dV/dt)c *
(dI/dt)c = 3.5A/ms
Tj=110
°
C
MIN
10
5
V/
μ
s
* For either polarity of electrode A2 voltage with reference to electrode A1.
IGM= 4A (tp = 20
μ
s)
VGM= 16V (tp = 20
μ
s).
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
BTA08 B/C / BTB08 B/C
2/5
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