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參數(shù)資料
| 型號(hào)： | BTA225B_SERIES_B |
| 元件分類： | TVS-瞬態(tài)抑制二極管 |
| 英文描述： | Transient Voltage Suppressor Diodes |
| 中文描述： | 三高減刑象限可控硅 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 67K |
| 代理商： | BTA225B_SERIES_B |
September 1997
2
Rev1.200
Philips Semiconductors
Product specification
Three quadrant triacs
high commutation
BTA225 series B
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated high commutation
triacs in a plastic envelope intended
foruseincircuitswherehighstaticand
dynamic dV/dt and high dI/dt can
occur loads. These devices will
commutate the full rated rms current
at
the
maximum
temperature, without the aid of a
snubber.
SYMBOL
PARAMETER
MAX.
MAX.
MAX. UNIT
BTA225-
500B
500
600B
600
800B
800
V
DRM
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
V
I
T(RMS)
I
TSM
25
190
25
190
25
190
A
A
rated
junction
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
tab
main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
-600
UNIT
-500
-800
V
DRM
Repetitive peak off-state
voltages
RMS on-state current
-
600
1
600
1
800
V
I
T(RMS)
full sine wave;
T
≤
91 C
full sine wave;
T
= 25 C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 30 A; I
= 0.2 A;
dI
G
/dt = 0.2 A/
μ
s
-
25
A
I
TSM
Non-repetitive peak
on-state current
-
-
-
190
209
180
100
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
A
2
s
A/
μ
s
I
GM
V
GM
P
GM
P
G(AV)
-
-
-
-
2
5
5
A
V
W
W
over any 20 ms
period
0.5
T
stg
T
j
Storage temperature
Operating junction
temperature
-40
-
150
125
C
C
T1
T2
G
1 2 3
tab
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/
μ
s.
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| BTA225SERIESC | Transient Voltage Suppressor Diodes |
| BTA225B-500C | Three quadrant triacs high commutation(三象限雙向高換向可控硅) |
| BTA225B | Three quadrant triacs high commutation |
| BTA225B-600C | Three quadrant triacs high commutation |
| BTA225B-800C | Three quadrant triacs high commutation(三象限雙向高換向可控硅) |
相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| BTA225BSERIESC | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Three quadrant triacs high commutation |
| BTA225SERIESB | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Three quadrant triacs high commutation |
| BTA225SERIESC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Three quadrant triacs high commutation |
| BTA22B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:10-A SILICON TRIACS |
| BTA22C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:10-A SILICON TRIACS |
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