參數(shù)資料
型號: BT139FSERIES
廠商: NXP Semiconductors N.V.
元件分類: TVS-瞬態(tài)抑制二極管
英文描述: Transient Voltage Suppressor Diodes
中文描述: 雙向可控硅
文件頁數(shù): 4/7頁
文件大?。?/td> 51K
代理商: BT139FSERIES
Philips Semiconductors
Product specification
Triacs
BT139F series
Fig.1. Maximum on-state dissipation, P
, versus rms
on-state current, I
T(RMS)
, where
α
= conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
, versus pulse width t
p
, for
sinusoidal currents, t
p
20ms.
Fig.3. Maximum permissible non-repetitive peak
on-state current I
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus heatsink temperature T
hs
.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
hs
38C.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25C), versus junction temperature T
j
.
0
5
10
15
20
0
5
10
15
20
25
= 180
120
90
60
30
BT139
IT(RMS) / A
Ptot / W
Ths(max) / C
125
105
85
65
45
25
1
-50
0
50
Ths / C
100
150
0
5
10
15
20
BT139X
38 C
IT(RMS) / A
10us
100us
1ms
T / s
10ms
100ms
10
100
1000
BT139
ITSM / A
T
ITSM
time
I
Tj initial = 125 C max
T
dI /dt limit
T2- G+ quadrant
0
0.1
1
10
10
20
30
40
50
BT139
surge duration / s
IT(RMS) / A
1
10
Number of cycles at 50Hz
100
1000
0
50
100
150
BT139
ITSM / A
T
ITSM
time
I
Tj initial = 125 C max
T
-50
0
50
100
150
0.4
0.6
0.8
1
1.2
1.4
1.6
BT136
Tj / C
VGT(Tj)
VGT(25 C)
February 1996
4
Rev 1.100
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