- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369508 > BT139F-800G Octal D-Type Flip-Flops with Enable 20-LCCC -55 to 125 PDF資料下載
參數(shù)資料
| 型號(hào)： | BT139F-800G |
| 英文描述： | Octal D-Type Flip-Flops with Enable 20-LCCC -55 to 125 |
| 中文描述： | 晶閘管產(chǎn)品目錄 |
| 文件頁(yè)數(shù)： | 125/224頁(yè) |
| 文件大?。?/td> | 2697K |
| 代理商： | BT139F-800G |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)第73頁(yè)第74頁(yè)第75頁(yè)第76頁(yè)第77頁(yè)第78頁(yè)第79頁(yè)第80頁(yè)第81頁(yè)第82頁(yè)第83頁(yè)第84頁(yè)第85頁(yè)第86頁(yè)第87頁(yè)第88頁(yè)第89頁(yè)第90頁(yè)第91頁(yè)第92頁(yè)第93頁(yè)第94頁(yè)第95頁(yè)第96頁(yè)第97頁(yè)第98頁(yè)第99頁(yè)第100頁(yè)第101頁(yè)第102頁(yè)第103頁(yè)第104頁(yè)第105頁(yè)第106頁(yè)第107頁(yè)第108頁(yè)第109頁(yè)第110頁(yè)第111頁(yè)第112頁(yè)第113頁(yè)第114頁(yè)第115頁(yè)第116頁(yè)第117頁(yè)第118頁(yè)第119頁(yè)第120頁(yè)第121頁(yè)第122頁(yè)第123頁(yè)第124頁(yè)當(dāng)前第125頁(yè)第126頁(yè)第127頁(yè)第128頁(yè)第129頁(yè)第130頁(yè)第131頁(yè)第132頁(yè)第133頁(yè)第134頁(yè)第135頁(yè)第136頁(yè)第137頁(yè)第138頁(yè)第139頁(yè)第140頁(yè)第141頁(yè)第142頁(yè)第143頁(yè)第144頁(yè)第145頁(yè)第146頁(yè)第147頁(yè)第148頁(yè)第149頁(yè)第150頁(yè)第151頁(yè)第152頁(yè)第153頁(yè)第154頁(yè)第155頁(yè)第156頁(yè)第157頁(yè)第158頁(yè)第159頁(yè)第160頁(yè)第161頁(yè)第162頁(yè)第163頁(yè)第164頁(yè)第165頁(yè)第166頁(yè)第167頁(yè)第168頁(yè)第169頁(yè)第170頁(yè)第171頁(yè)第172頁(yè)第173頁(yè)第174頁(yè)第175頁(yè)第176頁(yè)第177頁(yè)第178頁(yè)第179頁(yè)第180頁(yè)第181頁(yè)第182頁(yè)第183頁(yè)第184頁(yè)第185頁(yè)第186頁(yè)第187頁(yè)第188頁(yè)第189頁(yè)第190頁(yè)第191頁(yè)第192頁(yè)第193頁(yè)第194頁(yè)第195頁(yè)第196頁(yè)第197頁(yè)第198頁(yè)第199頁(yè)第200頁(yè)第201頁(yè)第202頁(yè)第203頁(yè)第204頁(yè)第205頁(yè)第206頁(yè)第207頁(yè)第208頁(yè)第209頁(yè)第210頁(yè)第211頁(yè)第212頁(yè)第213頁(yè)第214頁(yè)第215頁(yè)第216頁(yè)第217頁(yè)第218頁(yè)第219頁(yè)第220頁(yè)第221頁(yè)第222頁(yè)第223頁(yè)第224頁(yè)
Application Notes
AN1001
2002 Teccor Electronics
Thyristor Product Catalog
AN1001 - 5
http://www.teccor.com
+1 972-580-7777
When voltage is impressed suddenly across a PN junction, a
charging current flows, equal to:
When
becomes greater or equal to thyristor I
GT
,
the thyristor switches on. Normally, this type of turn-on does not
damage the device, providing the surge current is limited.
Generally, thyristor application circuits are designed with static
dv/dt snubber networks if fast-rising voltages are anticipated.
Voltage Breakover Turn-on
This method is used to switch on sidacs and diacs. However,
exceeding voltage breakover of SCRs and triacs is definitely not
recommended as a turn-on method.
In the case of SCRs and triacs, leakage current increases until it
exceeds the gate current required to turn on these gated thyris-
tors in a small localized point. When turn-on occurs by this
method, localized heating in a small area may melt the silicon or
damage the device if di/dt of the increasing current is not suffi-
ciently limited.
Diacs used in typical phase control circuits are basically pro-
tected against excessive current at breakover as long as the fir-
ing capacitor is not excessively large. When diacs are used in a
zener function, current limiting is necessary.
Sidacs are typically pulse-firing, high-voltage transformers and
are current limited by the transformer primary. The sidac should
be operated so peak current amplitude, current duration, and
di/dt limits are not exceeded.
Triac Gating Modes Of Operation
Triacs can be gated in four basic gating modes as shown in
Figure AN1001.17.
Figure AN1001.17
Gating Modes
The most common quadrants for triac gating-on are Quadrants I
and III, where the gate supply is synchronized with the main ter-
minal supply (gate positive — MT2 positive, gate negative —
MT2 negative). Gate sensitivity of triacs is most optimum in
Quadrants I and III due to the inherent thyristor chip construction.
If Quadrants I and III cannot be used, the next best operating
modes are Quadrants II and III where the gate has a negative
polarity supply with an AC main terminal supply. Typically, Quad-
rant II is approximately equal in gate sensitivity to Quadrant I;
however, latching current sensitivity in Quadrant II is lowest.
Therefore, it is difficult for triacs to latch on in Quadrant II when
the main terminal current supply is very low in value.
Special consideration should be given to gating circuit design
when Quadrants I and IV are used in actual application, because
Quadrant IV has the lowest gate sensitivity of all four operating
quadrants.
General Terminology
The following definitions of the most widely-used thyristor terms,
symbols, and definitions conform to existing EIA-JEDEC stan-
dards
:
Breakover Point –
Any point on the principal voltage-current
characteristic for which the differential resistance is zero and
where the principal voltage reaches a maximum value
Principal Current –
Generic term for the current through the col-
lector junction (the current through main terminal 1 and main ter-
minal 2 of a triac or anode and cathode of an SCR)
Principal Voltage –
Voltage between the main terminals:
(1) In the case of reverse blocking thyristors, the principal volt-
age is called positive when the anode potential is higher than
the cathode potential and negative when the anode potential
is lower than the cathode potential.
(2) For bidirectional thyristors, the principal voltage is called
positive when the potential of main terminal 2 is higher than
the potential of main terminal 1.
Off State –
Condition of the thyristor corresponding to the high-
resistance, low-current portion of the principal voltage-current
characteristic between the origin and the breakover point(s) in
the switching quadrant(s)
On State –
Condition of the thyristor corresponding to the low-
resistance, low-voltage portion of the principal voltage-current
characteristic in the switching quadrant(s).
Specific Terminology
Average Gate Power Dissipation [P
G(AV)
] –
Value of gate power
which may be dissipated between the gate and main terminal 1
(or cathode) averaged over a full cycle
Breakover Current (I
BO
) –
Principal current at the breakover
point
Breakover Voltage (V
BO
) –
Principal voltage at the breakover
point
Circuit-commutated Turn-off Time (t
) –
Time interval between
the instant when the principal current has decreased to zero after
external switching of the principal voltage circuit and the instant
when the thyristor is capable of supporting a specified principal
voltage without turning on
Critical Rate-of-rise of Commutation Voltage of a Triac
(Commutating dv/dt) –
Minimum value of the rate-of-rise of prin-
cipal voltage which will cause switching from the off state to the
on state immediately following on-state current conduction in the
opposite quadrant
i
C
dt
dv
=
C
dt
dv
MT2 POSITIVE
(Positive Half Cycle)
(NMT2 NEGATIVE
MT1
MT2
+
I
GT
REF
QII
QIII
MT1
I
GATE
MT2
REF
MT1
MT2
REF
MT1
MT2
REF
QI
QIV
ALL POLARITIES ARE REFERENCED TO MT1
(
-
)
I
GATE
(+)
I
GT
-
I
GATE
(
-
)
I
GATE
(+)
-
NOTE: Alternistors will not operate in Q IV
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BT136-800G | 8-Bit Multi-Level Pipeline Register 24-SOIC -40 to 85 |
| BT136M-500 | Triacs |
| BT136M-500F | Triacs |
| BT136M-500G | Octal Registered Transceivers with 3-State Outputs 24-SSOP/QSOP -40 to 85 |
| BT136M-600 | Octal Registered Transceivers with 3-State Outputs 24-SSOP/QSOP -40 to 85 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BT139F800H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|800V V(DRM)|16A I(T)RMS|SOT-186 |
| BT139FSERIES | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Triacs |
| BT139SERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Triacs |
| BT139SERIESE | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Triacs sensitive gate |
| BT139SERIESH | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Triacs high noise immunity |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。