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    參數資料
    型號: BT137M-500F
    廠商: NXP SEMICONDUCTORS
    元件分類: 晶閘管
    英文描述: Octal Buffers/Drivers with 3-State Outputs 20-LCCC -55 to 125
    中文描述: 500 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-252
    封裝: PLASTIC, SOT-428, 3 PIN
    文件頁數: 1/6頁
    文件大小: 52K
    代理商: BT137M-500F
    Philips Semiconductors
    Product specification
    Triacs
    BT137S series
    BT137M series
    GENERAL DESCRIPTION
    QUICK REFERENCE DATA
    Glass passivated triacs in a plastic
    envelope,
    suitable
    mounting,
    intended
    applications
    requiring
    bidirectional transient and blocking
    voltage capability and high thermal
    cycling
    performance.
    applications include motor control,
    industrial
    and
    domestic
    heating and static switching.
    SYMBOL
    PARAMETER
    MAX.
    MAX.
    MAX. UNIT
    for
    for
    surface
    use
    high
    in
    BT137S
    (or BT137M)
    -
    BT137S
    (or BT137M)
    -
    BT137S
    (or BT137M)
    -
    Repetitive peak off-state
    voltages
    RMS on-state current
    Non-repetitive peak on-state
    current
    500
    500F
    500G
    500
    600
    600F
    600G
    600
    800
    800F
    800G
    800
    V
    DRM
    V
    Typical
    I
    T(RMS)
    I
    TSM
    8
    65
    8
    65
    8
    A
    A
    lighting,
    65
    PINNING - SOT428
    PIN CONFIGURATION
    SYMBOL
    PIN
    Standard Alternative
    S
    NUMBER
    M
    1
    MT1
    gate
    2
    MT2
    MT2
    3
    gate
    MT1
    tab
    MT2
    MT2
    LIMITING VALUES
    Limiting values in accordance with the Absolute Maximum System (IEC 134).
    SYMBOL
    PARAMETER
    CONDITIONS
    MIN.
    MAX.
    -600
    600
    1
    UNIT
    -500
    500
    1
    -800
    800
    V
    DRM
    Repetitive peak off-state
    voltages
    RMS on-state current
    Non-repetitive peak
    on-state current
    -
    V
    I
    T(RMS)
    I
    TSM
    full sine wave; T
    mb
    102 C
    full sine wave; T
    j
    = 25 C prior to
    surge
    t = 20 ms
    t = 16.7 ms
    t = 10 ms
    I
    TM
    = 12 A; I
    = 0.2 A;
    dI
    G
    /dt = 0.2 A/
    μ
    s
    -
    8
    A
    -
    -
    -
    65
    71
    21
    A
    A
    I
    2
    t
    dI
    T
    /dt
    I
    2
    t for fusing
    Repetitive rate of rise of
    on-state current after
    triggering
    A
    2
    s
    T2+ G+
    T2+ G-
    T2- G-
    T2- G+
    -
    -
    -
    -
    -
    -
    -
    -
    50
    50
    50
    10
    2
    5
    5
    0.5
    150
    125
    A/
    μ
    s
    A/
    μ
    s
    A/
    μ
    s
    A/
    μ
    s
    A
    V
    W
    W
    C
    C
    I
    GM
    V
    GM
    P
    GM
    P
    G(AV)
    T
    stg
    T
    j
    Peak gate current
    Peak gate voltage
    Peak gate power
    Average gate power
    Storage temperature
    Operating junction
    temperature
    over any 20 ms period
    -40
    -
    1
    2
    3
    tab
    T1
    T2
    G
    1
    Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
    switch to the on-state. The rate of rise of current should not exceed 6 A/
    μ
    s.
    October 1997
    1
    Rev 1.200
    相關PDF資料
    PDF描述
    BT137M-500G Octal Buffers/Drivers with 3-State Outputs 20-CDIP -55 to 125
    BT137M-600 Octal Buffers/Drivers with 3-State Outputs 20-CDIP -55 to 125
    BT137MSERIES Transient Voltage Suppressor Diodes
    BT137MSERIESD Transient Voltage Suppressor Diodes
    BT137MSERIESE Transient Voltage Suppressor Diodes
    相關代理商/技術參數
    參數描述
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