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參數(shù)資料
| 型號(hào)： | BT136B -500D |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Triacs logic level |
| 中文描述： | 雙向可控硅邏輯電平 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 49K |
| 代理商： | BT136B -500D |
Philips Semiconductors
Product specification
Triacs
logic level
BT136B series D
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-mb
Thermal resistance
junction to mounting base
R
th j-a
Thermal resistance
junction to ambient
CONDITIONS
full cycle
half cycle
minimum footprint, FR4 board
MIN.
-
-
-
TYP.
-
-
55
MAX.
3.0
3.7
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
I
GT
Gate trigger current
CONDITIONS
V
D
= 12 V; I
T
= 0.1 A
MIN.
TYP.
MAX.
UNIT
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
2.0
2.5
2.5
5.0
5
5
5
10
mA
mA
mA
mA
I
L
Latching current
V
D
= 12 V; I
GT
= 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
-
-
-
1.6
4.5
1.2
2.2
1.2
1.4
0.7
0.4
0.1
10
15
10
15
10
1.70
1.5
-
0.5
mA
mA
mA
mA
mA
V
V
V
mA
I
H
V
T
V
GT
Holding current
On-state voltage
Gate trigger voltage
V
= 12 V; I
GT
= 0.1 A
I
T
= 5 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 C
V
D
= V
DRM(max)
; T
j
= 125 C
0.25
-
I
D
Off-state leakage current
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
dV
D
/dt
Critical rate of rise of
off-state voltage
t
gt
Gate controlled turn-on
time
CONDITIONS
V
= 67% V
; T
= 125 C;
exponential waveform; R
GK
= 1 k
I
TM
= 6 A; V
D
= V
DRM(max)
; I
G
= 0.1 A;
dI
G
/dt = 5 A/
μ
s
MIN.
-
TYP.
5
MAX.
-
UNIT
V/
μ
s
-
2
-
μ
s
October 1997
2
Rev 1.100
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