- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369503 > BST120 (NXP SEMICONDUCTORS) P-channel enhancement mode vertical D-MOS transistor PDF資料下載
參數(shù)資料
| 型號： | BST120 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-channel enhancement mode vertical D-MOS transistor |
| 中文描述： | 300 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SOT-89, 3 PIN |
| 文件頁數(shù)： | 3/12頁 |
| 文件大小： | 57K |
| 代理商： | BST120 |
April 1995
3
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
BST120
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
Note
1.
Transistor mounted on ceramic substrate: area = 2,5 cm
2
and thickness = 0,7 mm.
Drain-source voltage
Gate-source voltage (open drain)
Drain current (DC)
Drain current (peak)
Total power dissipation up to T
amb
= 25
°
C (note 1)
Storage temperature range
Junction temperature
V
DS
±
V
GSO
I
D
I
DM
P
tot
T
stg
T
j
max.
max.
max.
max.
max.
60 V
20 V
0.3 A
0.8 A
1 W
65 to + 150
°
C
max.
150
°
C
From junction to ambient (note 1)
R
th j-a
=
125 K/W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BST122 | P-channel enhancement mode vertical D-MOS transistor |
| BST15 | PNP high-voltage transistor |
| BST16 | PNP high-voltage transistor |
| BST40 | NPN high-voltage transistors |
| BST62_70 | |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BST12-0.7S06PCM | 制造商:Bellnix Co Ltd 功能描述:DC/DC Power Supply Single-OUT 0.75V 6A 6-Pin SMD Cut Tape |
| BST12-0.7S10PCM | 制造商:Bellnix Co Ltd 功能描述:DC/DC Power Supply Single-OUT 0.75V 10A 7-Pin SMD Cut Tape |
| BST12-0.7S16PCM | 制造商:Bellnix Co Ltd 功能描述:DC/DC Power Supply Single-OUT 0.75V 16A 7-Pin SMD Cut Tape |
| BST-120-09-G-D-230 | 制造商:Samtec Inc 功能描述:CONN UNSHRD HDR HDR 40 POS 2.54MM SLDR ST TH - Bulk |
| BST-120-09-G-D-318 | 制造商:Samtec Inc 功能描述:BOTTOM SHROUD TERMINAL - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復。