參數(shù)資料
型號(hào)： BSS129
廠商： Vishay Intertechnology,Inc.
英文描述： N-Channel Depletion-Mode MOSFET Transistor(最大漏源導(dǎo)通電阻20Ω，夾斷電流0.15A的N溝道耗盡型MOSFET晶體管)
中文描述： N溝道耗盡型MOSFET晶體管（最大漏源導(dǎo)通電阻20Ω，夾斷電流0.15A的N溝道耗盡型MOSFET的晶體管）
文件頁(yè)數(shù)： 2/4頁(yè)
文件大小： 71K
代理商： BSS129
ND2406L/2410L, BSS129
2
Siliconix
S-52426—Rev. C, 14-Apr-97
Specifications
a
Limits
ND2406L
ND2410L
BSS129
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Min
Max
Unit
Static
D i S
Drain-Source
Breakdown Voltage
V
GS
= –9 V, I
D
= 10 A
260
240
V
(BR)DSV
V
GS
= –5 V, I
D
= 10 A
260
240
V
GS
= –3 V, I
D
= 250 A
260
230
V
Gate Source Cutoff Voltage
Gate-Source Cutoff Voltage
GS( ff)
V
GS(off)
V
DS
= 5 V, I
D
= 10 A
–1.5
–4.5
–0.5
–2.5
V
DS
= 3 V, I
D
= 1 mA
–0.7
Gate Body Leakage
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
10
10
100
nA
=
50
50
V
DS
= 180 V, V
GS
= –9 V
1
=
200
Drain Cutoff Current
D( ff)
I
D(off)
V
DS
= 180 V, V
GS
= –5 V
1
A
=
200
V
DS
= 230 V, V
GS
= –3 V
0.1
=
200
Drain-Saturation Current
c
I
DSS
V
DS
= 10 V, V
GS
= 0 V
350
40
40
mA
V
GS
= 2 V, I
D
= 30 mA
3.3
Drain Source On Resistance
Drain-Source On-Resistance
c
r
DS(on)
V
GS
= 0 V, I
D
= 30 mA
4.5
6
10
=
7.2
15
25
V
GS
= 0 V, I
D
= 14 mA
4
20
Forward Transconductance
c
g
fs
V
DS
= 25 V, I
D
= 250 mA
375
140
mS
110
Common Source
Output Conductance
c
g
os
V
DS
= 10 V, I
D
= 30 A
70
S
Dynamic
Input Capacitance
C
iss
V
DS
= 25 V, V
GS
= –5 V
f = 1 MHz
25 V V
70
120
120
Output Capacitance
C
oss
20
30
30
pF
Reverse Transfer Capacitance
C
rss
10
15
15
Switching
d
Turn On Time
Turn-On Time
t
d(on)
15
t
r
25
30
75
ns
Turn-Off Time
t
d(off)
40
t
f
100
Notes
a.
b.
c.
d.
T
A
= 25 C unless otherwise noted.
For DESIGN AID ONLY, not subject to production testing.
Pulse test: PW
300 s duty cycle
Switching time is essentially independent of operating temperature.
VDDV24
2%.
相關(guān)PDF資料
PDF描述
BSS69-L2 SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS
BSS69R-L6 SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS
BSS70-L3 SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS
BSS70R-L7 SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS
BSS79B-CE SOT23 NPN SILICON PLANAR SWITCHING TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BSS129Q62702-S15 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR MOSFET TO 92 E LINE TO 237
BSS-12S2R5A 制造商:Bellnix Co Ltd 功能描述:Bulk
BSS131 制造商:Infineon Technologies AG 功能描述:MOSFET N SOT-23 制造商:Infineon Technologies AG 功能描述:MOSFET, N, SOT-23 制造商:Infineon Technologies AG 功能描述:N CH MOSFET, 240V, 100mA, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:100mA; Drain Source Voltage Vds:240V; On Resistance Rds(on):14ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.4V ;RoHS Compliant: Yes 制造商:Infineon Technologies AG 功能描述:N-channel MOSFET,BSS131 0.1A 240V
BSS131 H6327 功能描述:MOSFET CHIPLIEFERUNGEN RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BSS131 L6327 功能描述:MOSFET N-CH 240V 0.1 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*