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參數(shù)資料
| 型號(hào)： | BSR62 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | PNP Darlington transistor |
| 中文描述： | 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, SC-43A, 3 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 47K |
| 代理商： | BSR62 |
1999 Apr 26
3
Philips Semiconductors
Product specification
PNP Darlington transistor
BSR62
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
150
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
50
50
UNIT
I
CES
I
EBO
h
FE
collector cut-off current
emitter cut-off current
DC current gain
V
BE
= 0; V
CE
=
80 V
I
C
= 0; V
EB
=
4 V
V
CE
=
10 V; see Fig.2
I
C
=
150 mA
I
C
=
500 mA
I
C
=
0.5 A; I
B
=
0.5 mA
I
C
=
1 A; I
B
=
4 mA
nA
nA
1000
2000
200
1.4
1.8
2
2.4
V
CEsat
collector-emitter saturation
voltage
V
V
V
V
MHz
V
BEsat
base-emitter saturation voltage I
C
=
0.5 A; I
B
=
0.5 mA
I
C
=
1 A; I
B
=
4 mA
I
C
=
500 mA; V
CE
=
5 V;
f = 100 MHz
f
T
transition frequency
Switching times (between 10% and 90% levels);
see Fig.3
t
on
t
off
turn-on time
turn-off time
I
Con
=
500 mA; I
Bon
=
0.5 mA;
I
Boff
= 0.5 mA
0.5
0.7
μ
s
μ
s
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