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參數(shù)資料
| 型號： | BSR17A-MR |
| 英文描述： | TRANSISTOR BSR17A MINIREEL 500PCS |
| 中文描述： | 晶體管BSR17A MINIREEL 500件 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 62K |
| 代理商： | BSR17A-MR |
1997 Jun 02
4
Philips Semiconductors
Product specification
NPN switching transistor
BSR17A
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Note
1.
Pulse test: t
p
≤
300
μ
s;
δ ≤
0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 30 V
I
E
= 0; V
CB
= 30 V; T
j
= 150
°
C
I
C
= 0; V
EB
= 6 V
V
CE
= 1 V; note 1; see Fig.2
I
C
= 0.1 mA
I
C
= 1 mA
I
C
= 10 mA
I
C
= 50 mA
I
C
= 100 mA
I
C
= 10 mA; I
B
= 1 mA; note 1
I
C
= 50 mA; I
B
= 5 mA; note 1
I
C
= 10 mA; I
B
= 1 mA; note 1
I
C
= 50 mA; I
B
= 5 mA; note 1
I
E
= i
e
= 0; V
CB
= 5 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 500 mV; f = 1 MHz
I
C
= 10 mA; V
CE
= 20 V; f = 100 MHz
I
C
= 100
μ
A; V
CE
= 5 V; R
S
= 1 k
;
f = 10 Hz to 15.7 kHz
50
5
50
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
60
80
100
60
30
650
300
300
200
200
850
950
4
8
5
V
CEsat
collector-emitter saturation voltage
mV
mV
mV
mV
pF
pF
MHz
dB
V
BEsat
base-emitter saturation voltage
C
c
C
e
f
T
F
collector capacitance
emitter capacitance
transition frequency
noise figure
Switching times (between 10% and 90% levels);
see Fig.3
t
on
t
d
t
r
t
off
t
s
t
f
turn-on time
delay time
rise time
turn-off time
storage time
fall time
I
Con
= 10 mA; I
Bon
= 1 mA; I
Boff
=
1 mA
65
35
35
240
200
50
ns
ns
ns
ns
ns
ns
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